IRF-36 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607，IIRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement

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PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l

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PD - 97308C Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switc

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IRFP4368PbF VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 75V 1.46m 1.85m 350A 195A Applications • High Efficiency Synchronou

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4368，IIRFP4368 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85mΩ ·Enhancement

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PD-97742 RevB Integrated Power Hybrid IC for Appliance Motor Drive Applications Description with Open Emitter Pins IRAM136-1561A Series 15A, 600V

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast

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www.vishay.com IRFP360 Vishay Siliconix Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 400 VGS = 10 V

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP360 FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Volt

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www.DataSheet4U.com IRFP360 Data Sheet July 1999 File Number 2290.3 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is desig

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AUTOMOTIVE GRADE PD - 96402A Features l l l l l l l AUIRFS3607 AUIRFSL3607 HEXFET® Power MOSFET D Advanced Process Technology Low On-Resistance 17

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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PD - 97308C Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switc

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Isc N-Channel MOSFET Transistor IRF3610S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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A3M36SL037 Airfast Power Amplifier Module with Autobias Control Rev. 0 — January 2023 Data Sheet: Technical Data The A3M36SL037 is a fully integrate

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HEXFET® Power MOSFET PD - 9.1230 IRFP360LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso

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PD - 94951 IRFP360LCPbF • Lead-Free www.irf.com 1 1/28/04 IRFP360LCPbF 2 www.irf.com IRFP360LCPbF www.irf.com 3 IRFP360LCPbF 4 www.irf.c

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PD - 96312 IRF9362PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 21.0 32.0 13 -8.0 V mΩ mΩ nC A S2 1 G 2 2 S1 3 G 1 4 8 D2 7 D2 6 D1

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PD - 96376 AUTOMOTIVE GRADE Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repeti

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-252(DPAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high fre

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