IRF530N Datasheet | Specifications & PDF Download

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N FEATURES • ’Trench’ technology • Low on-state resistance • Fa

(1 views)

IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Featur

(1 views)

PD - 91351 IRF530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Tempera

(1 views)

PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l

(1 views)

PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l

(1 views)

PD - 95100 HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

(1 views)

PD - 95100 HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

(1 views)

Data Sheet January 2002 IRF530N 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE)

(1 views)

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

(1 views)

Isc N-Channel MOSFET Transistor IRF530NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

(1 views)

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.09Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

(1 views)

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

(1 views)

IRF530NPBF IRF530NPBF Datasheet www.VBsemi.com N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.127at VGS = 10 V I

(1 views)