Philips Semiconductors Product specification N-c.
International Rectifier
IRF530NL - HEXFET Power MOSFET
PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l .
INCHANGE
IRF530NS - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IRF530NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.
NXP
IRF530N - N-channel TrenchMOS transistor
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N FEATURES • ’Trench’ technology • Low on-state resistance • Fa.
Intersil Corporation
IRF530N - N-Channel Power MOSFET
IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Featur.
International Rectifier
IRF530N - Power MOSFET
PD - 91351 IRF530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Tempera.
International Rectifier
IRF530NS - Power MOSFET
PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l .
International Rectifier
IRF530NLPBF - HEXFET Power MOSFET
PD - 95100 HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit.
International Rectifier
IRF530NSPBF - HEXFET Power MOSFET
PD - 95100 HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit.
Fairchild Semiconductor
IRF530N - Power MOSFET
Data Sheet January 2002 IRF530N 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE).
International Rectifier
IRF530NPbF - HEXFET Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
INCHANGE
IRF530N - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.09Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
INCHANGE
IRF530NL - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test.
VBsemi
IRF530NPBF - N-Channel MOSFET
IRF530NPBF IRF530NPBF Datasheet www.VBsemi.com N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.127at VGS = 10 V I.