IRF9530, RF1S9530SM Data Sheet July 1999 File Numb.
International Rectifier
F9530N - IRF9530N
www.DataSheet.in PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature.
INCHANGE
IRF9530 - P-Channel MOSFET
isc P-Channel Mosfet Transistor INCHANGE Semiconductor IRF9530 FEATURES ·-12A，-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Res.
INCHANGE
IRF9530N - P-Channel MOSFET
isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.2Ω ·Enhancement mode: ·100% avalanche tes.
International Rectifier
IRF9530N - Power MOSFET
PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-.
International Rectifier
IRF9530NPBF - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free De.
INCHANGE
IRF9530NS - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technolog.
International Rectifier
IRF9530NL - Power MOSFET
PD - 91523A IRF9530NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Ope.
International Rectifier
IRF9530NSPBF - Power MOSFET
www.DataSheet4U.com PD- 95439 IRF9530NSPbF IRF9530NLPbF Lead-Free www.irf.com 1 04/26/05 IRF9530NS/LPbF 2 www.irf.com IRF9530NS/LPbF www..
International Rectifier
IRF9530NS - Power MOSFET
PD - 91523A IRF9530NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Ope.
INCHANGE
IRF9530S - P-Channel MOSFET
isc P-Channel Mosfet Transistor INCHANGE Semiconductor IRF9530S FEATURES ·-12A，-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Re.
INCHANGE
IRF9530NL - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technolog.
Fairchild Semiconductor
IRF9530 - P-Channel Power MOSFETs
Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power fie.
Vishay
IRF9530S - Power MOSFET
www.vishay.com IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET D2PAK (TO-263) S G GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω.
Vishay
IRF9530 - Power MOSFET
www.vishay.com IRF9530 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qg.
VBsemi
IRF9530NS - P-Channel MOSFET
IRF9530NS-VB IRF9530NS-VB Datasheet P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Max. -100 0.22 at VGS = - 10.
Intersil Corporation
IRF9530 - P-Channel Power MOSFET
IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silico.
