IRFP250 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250N，IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo

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iscN-Channel MOSFET Transistor IRFP250 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =

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N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET TYPE IRFP250 s s s s s IRFP250 VDSS 200V RDS(on) < 0.085Ω ID 33 A TYPICAL RDS(on) = 0.07

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PD - 95007A l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Par

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250M，IIRFP250M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo

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PD - 96292 l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Para

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PD - 95007A IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-

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Data Sheet January 2002 IRFP250 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transis

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP250A FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Vol

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Standard Power MOSFET N-Channel Enhancement Mode IRFP 250 VDSS ID (cont) RDS(on) = 200 V = 30 A = 85 mΩ Symbol Test Conditions VDSS V DGR VGS VG

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www.vishay.com IRFP250 Vishay Siliconix Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 VGS = 10 V

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IRFP250B November 2001 IRFP250B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralle

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