iscN-Channel MOSFET Transistor IRFP250 ·FEATURE.
IRFP250 - N-Channel MOSFET Transistor
iscN-Channel MOSFET Transistor IRFP250 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.IRFP250N - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250N,IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo.IRFP250 - N-CHANNEL MOSFET
N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET TYPE IRFP250 s s s s s IRFP250 VDSS 200V RDS(on) < 0.085Ω ID 33 A TYPICAL RDS(on) = 0.07.IRFP250N - Power MOSFET
PD - 95007A l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Par.IRFP250M - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250M,IIRFP250M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo.IRFP250A - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP250A FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Vol.IRFP250 - N-Channel Power MOSFET
Data Sheet January 2002 IRFP250 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transis.IRFP250 - Power MOSFET
www.vishay.com IRFP250 Vishay Siliconix Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 VGS = 10 V .IRFP250 - Power MOSFET
Standard Power MOSFET N-Channel Enhancement Mode IRFP 250 VDSS ID (cont) RDS(on) = 200 V = 30 A = 85 mΩ Symbol Test Conditions VDSS V DGR VGS VG.IRFP250MPBF - Power MOSFET
PD - 96292 l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Para.IRFP250MPbF - MOSFET
Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralle.IRFP250NPBF - Power MOSFET
PD - 95007A IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche .IRFP250B - 200V N-Channel MOSFET
IRFP250B November 2001 IRFP250B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.IRFP250A - Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.IRFP250NPBF - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-.