IRFZ24N Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ24N FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Volta

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www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel en

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HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lea

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IRFZ24N HEXFET ® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175¥ Operating Temperature Fast Switching Fully Avalanche Rated VDSS=

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www.DataSheet4U.com PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL)

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262(DPAK) packaging ·Surface mount ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot

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IRFZ24NS/NL Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A D N Channel G S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless s

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www.DataSheet4U.com PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile throu

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IRFZ24NS IRFZ24NS Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.023 at VGS = 10 V 0.027 at VGS =

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AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT and dI/dT capability  175°C Operating Temperature  Fast S

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HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lea

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www.DataSheet4U.com PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL)

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Surface mount ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lo

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IRFZ24NS/NL Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A D N Channel G S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless s

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AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT and dI/dT capability  175°C Operating Temperature  Fast S

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AUTOMOTIVE GRADE PD - 96377 Features l l l l l l l l l AUIRFZ24NS AUIRFZ24NL HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance D

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www.DataSheet4U.com PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile throu

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AUTOMOTIVE GRADE PD - 96377 Features l l l l l l l l l AUIRFZ24NS AUIRFZ24NL HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance D

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