Ordering number:EN836G N-Channel Junction Silicon.
Renesas
K2225 - High Speed Power Switching MOSFET
2SK2225 1500V - 2A - MOS FET High Speed Power Switching Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) Hig.
NIC
NATK222M35V18X22JLSYF - Surface Mount Aluminum Electrolytic Capacitors
Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • EXTENDED TEMPERATURE +125OC & LONG LIFE (T0 5,000 HOURS) AVAILABLE WITH ANTI-VIBRATION.
NIC
NATK222M16V16X17JLSYF - Surface Mount Aluminum Electrolytic Capacitors
Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • EXTENDED TEMPERATURE +125OC & LONG LIFE (T0 5,000 HOURS) AVAILABLE WITH ANTI-VIBRATION.
Hitachi Semiconductor
2SK2221 - Silicon N-Channel MOSFET
2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • H.
Fuji Electric
2SK2224-01R - N-channel MOS-FET
2SK2224-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.
TDK
73K222AL - Single-Chip Modem
73K222AL V.22, V.21, Bell 212A, 103 Single-Chip Modem DESCRIPTION The 73K222AL is a highly integrated single-chip modem IC which provides the functio.
TDK
73K222AU - Single-Chip Modem
® TDK SEMICONDUCTOR CORP. DESCRIPTION The 73K222AU is a compact, high-performance modem which includes a 8250A/16C450 compatible UART with the 1200 bi.
Renesas
K2221 - Silicon N-Channel MOSFET
2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain.
Renesas
K2220 - Silicon N Channel MOS FET
2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain.
Nichicon
UFG1K222MEM - ALUMINUM ELECTROLYTIC CAPACITORS
ALUMINUM ELECTROLYTIC CAPACITORS FG High Grade Standard Type, For Audio Equipment series Fine Gold MUSE acoustic series suited for high grade audio .
Nichicon
UBX1K222MHL - ALUMINUM ELECTROLYTIC CAPACITORS
ALUMINUM ELECTROLYTIC CAPACITORS BX High Temperature Range, For +150°C Use series Laminated case series. Suited for automobile electronics where heav.
Hitachi Semiconductor
K2221 - 2SK2221
2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain.
NIC
NATK222M25V18X17.5JLSYF - Surface Mount Aluminum Electrolytic Capacitors
Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • EXTENDED TEMPERATURE +125OC & LONG LIFE (T0 5,000 HOURS) AVAILABLE WITH ANTI-VIBRATION.
Fuji Electric
2SK2223-01R - N-channel MOS-FET
2SK2223-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.
Hitachi Semiconductor
2SK2225 - Silicon N-Channel MOSFET
2SK2225 Silicon N-Channel MOS FET ADE-208-140 1st. Edition Application High speed power switching Features • • • • • High breakdown voltage (VDSS =.
Fuji Electric
2SK2226-01L - N-channel MOS-FET
2SK2226-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel.
Toshiba Semiconductor
2SK2229 - Silicon N-Channel MOSFET
2SK2229 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2229 Chopper Regulator, DC−DC Converter and Motor Drive Application.
Teridian Semiconductor
73K222AU - Single-Chip Modem
DESCRIPTION The 73K222AU is a compact, high-performance modem, which includes an 8250A/16C450 compatible UART with the 1200 bit/s modem function on a .
Renesas
2SK2221 - Silicon N-Channel MOSFET
2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain.
