K368 Datasheet | Specifications & PDF Download

www.DataSheet4U.com PRELIM INARY 2SK3683-01MR (500V/0.38Ω/19A) 1) Package Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current G

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2SK3681-01 FUJI POWER MOSFET Super FAP-G Series 200401 N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] High speed switching No secon

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2SK3687-01MR www.DataSheet4U.com FUJI POWER MOSFET Super FAP-G Series 200311 N-CHANNEL SILICON POWER MOSFET Features High speed switching No seconda

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isc N-Channel MOSFET Transistor 2SK3684-01L FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source O

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isc N-Channel MOSFET Transistor 2SK3683-01MR FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source

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isc N-Channel MOSFET Transistor 2SK3684-01S FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source O

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applic

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2SK3683-01MR FUJI POWER MOSFET Super FAP-G Series 200309 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanch

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Snap-In Aluminum Electrolytic Capacitors PEH536 Series, +105ºC Overview Applications Typical applications for KEMET's PEH536 capacitor include switc

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2SK3688-01L,S,SJ Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWE

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-

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isc N-Channel MOSFET Transistor 2SK3688-01L FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source O

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isc N-Channel MOSFET Transistor 2SK3687-01MR FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source

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isc N-Channel MOSFET Transistor 2SK3682-01 FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On

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K368-VB K368-VB Datasheet P-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.50 at VGS = - 10 V 0.56 at VG

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www.DataSheet4U.com 2SK3680-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High spee

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www.DataSheet4U.com 2SK3682-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High spee

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2SK3686-01 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200509 Super FA

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2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No

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isc N-Channel MOSFET Transistor 2SK3680 FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max) ·Fast Switching ·100% avalanche tested ·M

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