KTA Datasheet | Specifications & PDF Download

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Elektronische Bauelemente KTA1270 -0.5A , -35V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-

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SEMICONDUCTOR TECHNICAL DATA INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A,

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PNP Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTC3876. z Excellent HFE Linearity. z Low noise. Pb Lead-free Production specif

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Plastic-Encapsulate Transistors FEATURES • Complementary To KTC3875. • Excellent HFELinearity. • Low noise. KTA1504(PNP) Maximum Ratings (TA=25 Par

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SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. FEATURES Adoption of MBIT Processes. Large Current Cap

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Elektronische Bauelemente KTA1504 -0.15A , -50V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=-6V, IC=-40

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KTA1046 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package.  / Features , KTC2026 。 L

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Elektronische Bauelemente KTA1266 -0.15A , -50V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead

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DIP Type ■ Features ● Excellent hFE Linearity ● Complementary to KTC3202. Transistors PNP Transistors KTA1270 TO-92 4.8 ± 0.3 Unit:mm 3.8 ± 0.3 5.

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KTA1277 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP 。Silicon PNP transistor in a TO-92LM Plastic Package.  / Features ，，。 High VCBO

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TOSHIBA CONFIDENTIAL Tx58TEGxDDKTAx0 TOSHIBA NAND memory Toggle DDR1.0 Technical Data Sheet Rev. 0.6 2013 – 07 – 10 TOSHIBA Semiconductor & Storage P

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES Low Collector Saturation Voltage : VCE(sat)=-1

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J B EB SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING APPLICATION. FEATURES High Voltage : VCEO=-150V. High Transition Frequency : fT=120MHz(Typ

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SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURES ᴌExcellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA

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J B ED SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High Voltage : VCEO=-120V. High Transition Frequency : fT=120MHz(Typ.). 1W(Mon

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SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES ᴌComplementary to KTC3205. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector

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