M006 Datasheet | Specifications & PDF Download

KEMET Part Number: T529P476M006AAE200 Capacitor, Tantalum, 47 uF, 2012, +/-20% Tol, 6.3V@85C General Information Supplier: Construction: KEMET Subst

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KEMET Aluminum Organic Capacitor (AO-CAP) A700 Series Polymer Aluminum Overview The KEMET Aluminum Organic Capacitor (AO-CAP) is a solid state alumin

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E3M0060065K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno

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C3M0065090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain Features (TAB) • New C3M Silicon Car

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E4M0060075J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 750V SiC MOSFET technology Tab

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ESD Protection Diode NSPM0061 Features  Protection for the following IEC Standards: IEC61000−4−2 Level 4: 30 kV Contact Discharge IEC61000−4−5 (Lig

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www.DataSheet4U.com TSM006 Primary PWM Controller s s s s s s s s s s s s s s Current-mode PWM Controller High-current output drive suitable for Powe

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www.DataSheet4U.com 8.5-11.0 GHZ, 5W Power Amplifier MAAPGM0063-DIE RO-P-DS-3094 Preliminary Datasheet Features ♦ 5 Watt Saturated Output Power Lev

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Amphenol SIM Reader 1. Material: Pin: Copper alloy Insulator: High temperature thermoplastic 2. Plating: Contact area: 0.8 µm Au at mating area Sold

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Type TAS Solid Tantalum Capacitors Solid Tantalum Capacitors { Hermetically Sealed { High Capacitance { Low DC Leakage { Low Dissipation Factor { Te

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6 3 7516PU-M 31.765ºPHYUBR-IMD 3.75º HYBRID LEAD WIRE UL3266 AWG 26 Unit: inches (mm) 11.8 (300) MIN +0.000 ) - 0.013 +.0000 - .0005 +.00) - .0

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C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Fe

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VDS 650 V C3M0060065D ID @ 25˚C 29 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 60 mΩ N-Channel Enhancement Mode

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C3M0060065L Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode F eature s • 3rd generation SiC MOSFET technology

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C3M0065090D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3M SiC MOSFET technology • High blocking volta

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E3M0060065D Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET tech

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C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) Features • 3rd Generation SiC

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YAGEO Corporation Date: 04/15/2009 Aluminum Electrolytic Capacitors File : 2060 Engineering Bulletin for SH Type Page: 1/25 ____________________

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TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 T110 SERIES — POLAR TYPE, T212 (CSR13) KEMET standard hermetic sealed T110 Series are desirable

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TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 T110 SERIES — POLAR TYPE, T212 (CSR13) KEMET standard hermetic sealed T110 Series are desirable

Rating: 1 ★ (4 votes)