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Analog Devices
AD9354 - WiMAX/WiBro RF MxFE MISO Transceiver
OBSOLE ADCTE FEATURES RF transceiver with integrated ADCs and DACs IEEE 802.16 WiMAX/WiBro Dual receivers, single transmitter Operating band: 2.3 GHz.
SemiSouth
SDP30S120 - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior.
SemiSouth
SDA10S120 - Silicon Carbide Power Schottky Diode
PRELIMINARY Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switch.
SemiSouth
SDB05S120 - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior.
SemiSouth
SJEP120R063 - Normally-OFF Trench Silicon Carbide Power JFET
PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Pos.
Analog Devices
AD9355 - WiMAX/WiBro RF MxFE MISO Transceiver
WiMAX/WiBro RF MxFE MISO Transceiver AD9355 07633-001 FEATURES FUNCTIONAL BLOCK DIAGRAM RF transceiver with integrated ADCs and DACs IEEE 802.16 W.
SemiSouth
SDA05S120 - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior.
SemiSouth
SDP60S120D - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior.
SemiSouth
SDP10S120D - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior.
SemiSouth
SDB10S120 - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior.
Seme LAB
2N7081220MISO - N-CHANNEL POWER MOSFET
2N7081–220M–ISO MECHANICAL DATA Dimensions in mm(inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) N–CHANNEL POWER MOSFET VDSS ID(cont) RD.
SemiSouth
SJEP170R550 - Normally-OFF Trench Silicon Carbide Power JFET
Silicon Carbide SJEP170R550 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Positive Tempera.
SemiSouth
SJDP120R085 - Normally-On Trench Silicon Carbide Power JFET
Silicon Carbide SJDP120R085 Normally-On Trench Silicon Carbide Power JFET Features: - Positive Temperature Coefficient for Ease of Paralleling - E.
SemiSouth
SJDA065R055 - Normally-On Trench Silicon Carbide Power JFET
Normally-On Trench Silicon Carbide Power JFET Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No.
SemiSouth
SDP20S120D - Silicon Carbide Power Schottky Diode
Silicon Carbide SDP20S120D Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature In.