ETC
1.5SCMJ180A - SURFACE MOUNT DEVICES
SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS
TYPE
PLASTIC MATERIAL USED CARRIES UL 94V-0
Marking
Zener Voltage VZ (V) @ IZT
Min Nom Max
Test cur
Rating:
1
★
(8 votes)
STMicroelectronics
STGB18N40LZ - EAS 180 mJ - 400 V - internally clamped IGBT
STGB18N40LZ STGD18N40LZ, STGP18N40LZ
EAS 180 mJ - 390 V - internally clamped IGBT
Features
■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 1
Rating:
1
★
(6 votes)
SavantIC
MJE18004 - SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220 package www.datasheet4u.com ·High voltage ,high
Rating:
1
★
(6 votes)
ETC
1.5SCMJ180CA - SURFACE MOUNT DEVICES
SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS
TYPE
PLASTIC MATERIAL USED CARRIES UL 94V-0
Marking
Zener Voltage VZ (V) @ IZT
Min Nom Max
Test cur
Rating:
1
★
(6 votes)
ETC
P6SBMJ180A - SURFACE MOUNT DEVICES
SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS
TYPE
PLASTIC MATERIAL USED CARRIES UL 94V-0
Marking
Zener Voltage VZ (V) @ IZT
Min Nom Max
Test cur
Rating:
1
★
(5 votes)
Central Semiconductor
MJE180 - POWER TRANSISTOR
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
Rating:
1
★
(4 votes)
Motorola
MJE18002D2 - POWER TRANSISTORS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18002D2/D
MJE18002D2
Advance Information
High Speed, High Gain Bipolar NPN Power T
Rating:
1
★
(4 votes)
ON Semiconductor
MJD18002D2 - POWER TRANSISTOR 2 AMPERES
www.DataSheet4U.com
MJD18002D2 Bipolar NPN Transistor
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and
Rating:
1
★
(4 votes)
ETC
P6SBMJ180CA - SURFACE MOUNT DEVICES
SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS
TYPE
PLASTIC MATERIAL USED CARRIES UL 94V-0
Marking
Zener Voltage VZ (V) @ IZT
Min Nom Max
Test cur
Rating:
1
★
(4 votes)
INCHANGE
MJE18004G - NPN Transistor
isc Silicon NPN Power Transistor
MJE18004G
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Pa
Rating:
1
★
(4 votes)
INCHANGE
MJE18004 - NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari
Rating:
1
★
(4 votes)
INCHANGE
MJE18008 - NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari
Rating:
1
★
(4 votes)
ETC
MJ-180 - DC Jack
www.datasheet4u.com
www.datasheet4u.com
www.datasheet4u.com
www.datasheet4u.com
Rating:
1
★
(3 votes)
ETC
MJ-180P - DC Jack
www.datasheet4u.com
www.datasheet4u.com
www.datasheet4u.com
www.datasheet4u.com
Rating:
1
★
(3 votes)
Motorola
MJE18002 - POWER TRANSISTOR
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18002/D
™ Data Sheet SWITCHMODE™
Designer's
NPN Bipolar Power Transistor For Switc
Rating:
1
★
(3 votes)
Motorola
MJE18004D2 - POWER TRANSISTORS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18004D2/D
MJE18004D2
Designer's
™ Data Sheet
High Speed, High Gain Bipolar NPN Po
Rating:
1
★
(3 votes)
Motorola
MJE18008 - POWER TRANSISTOR
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18008/D
™ Data Sheet SWITCHMODE™
Designer's
MJE18008 * MJF18008 *
*Motorola Prefer
Rating:
1
★
(3 votes)
Motorola
MJF18006 - POWER TRANSISTOR
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18006/D
™ Data Sheet SWITCHMODE™
Designer's
MJE18006 * MJF18006 *
*Motorola Prefer
Rating:
1
★
(3 votes)
ON
MJW18020 - NPN Silicon Power Transistors
MJW18020
NPN Silicon Power Transistors High Voltage Planar
The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor contr
Rating:
1
★
(3 votes)
SavantIC
MJE181 - (MJE180 - MJE182) SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE180/181/182
www.datasheet4u.com
DESCRIPTION ·With TO-126 package ·C
Rating:
1
★
(3 votes)
