MJ-180 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE180/181/182 www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C

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isc Silicon NPN Power Transistor MJF18004 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-t

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SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE PLASTIC MATERIAL USED CARRIES UL 94V-0 Marking Zener Voltage VZ (V) @ IZT Min Nom Max Test cur

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari

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SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE PLASTIC MATERIAL USED CARRIES UL 94V-0 Marking Zener Voltage VZ (V) @ IZT Min Nom Max Test cur

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switc

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www.DataSheet4U.com MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE180/181/182 www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C

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MJE180 Silicon NPN Transistor Low Power Audio Amp, Low Current, High Speed Switch TO−126 Type Package Absolute Maximum Ratings: (TC = +25C unless ot

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MJW18020 NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor contr

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STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 1

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJ1800 DESCRIPTION ·High Collector-Emitter Voltage ·Good Linearity

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switc

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18006/D ™ Data Sheet SWITCHMODE™ Designer's MJE18006 * MJF18006 * *Motorola Prefer

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package www.datasheet4u.com ·High voltage ,high

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari

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MJE180/181/182 MJE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications 1 TO-126 2.Collector 3.Base NPN Epitaxial Si

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