MMBT3904-C Datasheet | Specifications & PDF Download

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3904 NPN switching transistor Product data sheet Supersedes data of 2002 Oct 04 2004

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Features  Complementary PNP Type Available (DIODES™ MMBT3906)  Ideal for Medium Power Amplification and Switching  Totally Lead-Free & Fully RoHS C

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GSTMMBT3904W NPN General Purpose Transistor Product Description This device is designed as a general purpose amplifier and switch. Features  Collec

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SMBT3904 MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT39

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MMBT3904W Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package.  / Features 、。 Low curr

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® MMBT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type MMBT3904 s Marking 34 s s s SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-2

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Small Signal Product MMBT3904 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device

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www.DataSheet4U.com General Purpose Transistor SMD Diodes Specialist MMBT3904-G (NPN) RoHS Device Features -Epitaxial planar die construction -As co

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NEW PRODUCT Features  BVCEO > 40V  IC = 200mA High Collector Current  PD = 925mW Power Dissipation  0.36mm2 Package Footprint, 40% Smaller than D

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General Purpose Transistor NPN Silicon MMBT3904L, SMMBT3904L Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S P

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General Purpose Transistors NPN and PNP Silicon MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP These transistors are de

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MMBT3904T TRANSISTOR(NPN) FEATURES  Complementary to MMBT3906T  Small Package SOT–523 MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted

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General Purpose Transistor NPN Silicon MMBT3904L, SMMBT3904L Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S P

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MMBT3904LP 40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006-3 Features  BVCEO > 40V  IC = 200mA High Collector Current  PD = 1000mW Power Dissipation 

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FEATURES „ Power dissipation, PCM:0.2W (Tamb=25℃) „ Collector current, ICM: 0.2A „ Collector-base voltage, V(BR)CBO: 60V „ Operating and storage junct

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General Purpose Transistors NPN and PNP Silicon MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP These transistors are de

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2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier October 2014 2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Description This

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UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=4

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General Purpose Transistor NPN Silicon MMBT3904L, SMMBT3904L Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S P

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SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Me

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