MMBT3906-Q Datasheet | Specifications & PDF Download

Features • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT3904 • Totally Lead-Fr

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MMBT3906-AU PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts SOT-23 Unit：inch(mm) FEATURES • PNP epitaxial silicon, pla

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® MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type MMBT3906 s Marking 36 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-2

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MMBT3906 PNP Small Signal Transistor Features ■ PNP transistor, Complementary Type MMBT3904 Absolute Maximum Ratings (TA=25°C unless otherwise speci

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ADVANCE INFORMATION MMBT3906LP 40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features  BVCEO > -40V  IC = -200mA High Collector Current  PD = 1000mW

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www.DataSheet4U.com General Purpose Transistor SMD Diodes Specialist MMBT3906-G (PNP) RoHS Device Features -Epitaxial planar die construction -As co

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MMBT3906 40 V, 200 mA PNP switching transistor 10 April 2025 Product data sheet 1. General description PNP switching transistor in a small SOT23 Sur

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MMBT3906 200mA General Purpose PNP Epitaxial Planar Transistor ■ Features • High collector-emitterbreakdien voltage. (BVCEO = -40V@IC=1mA). • Small l

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Features ■ Epitaxial planar die construction ■ Complementary NPN type available MMBT3904AT ■ Also available in lead free version Absolute Maximum Rat

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PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: T

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Elektronische Bauelemente MMBT3906-C -200mA, -40V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and

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MMBT3906-Q 40 V, 200 mA PNP switching transistor 10 April 2025 Product data sheet 1. General description PNP switching transistor in a small SOT23 S

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General Purpose Transistors NPN and PNP Silicon MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP These transistors are de

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is desi

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MMBT3906EF PNP Silicon Transistor Descriptions • Small signal application • Switching application Features • Low collector saturation voltage • Low

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier April 2014 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This de

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MMBT3906 Silicon PNP SMD triode 1˖base 2˖emitter 3˖collector encapsulation mode˖SOT-23 Classification of hFE˄1˅ Rank L H Range 100-200 200-30

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General Purpose Transistor PNP Silicon M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Curren

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General Purpose Transistor PNP Silicon MMBT3906L, SMMBT3906L Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Cont

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Features  BVCEO > -40V  IC = -200mA high Collector Current  PD = 435mW Power Dissipation  0.48mm2 package footprint, 16 times smaller than SOT23 

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