MT-2B Datasheet | Specifications & PDF Download

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ESMT Flash FEATURES  Single-level cell (SLC) technology  Organization - Page size x1: 2176 bytes (2048 + 128 bytes) - Block size: 64 pages (128K + 8

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tm • • • • • TE CH T431616C SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed add

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ESMT SDRAM M12L16161A (2R) 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION  JEDEC standard 3.3V power supply The M12L16161A

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tm TE CH T431616D/E SDRAM FEATURES Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Inte

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PRELIMINARY 256Mb: x32 SDRAM SYNCHRONOUS DRAM FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system

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STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN 1 2 www.DataSheet4U.com DESCRIPTION Cathode Ano

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BS Series SILICON PLANAR ZENER DIODES Max. 0.45 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 D

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ZJ Series Silicon Epitaxial Planar Zener Diodes Constant voltage control applications Features • Glass sealed envelope • High reliability Max. 0.45

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TDFN SO8 KMT32B Magnetic Angle Sensor SPECIFICATIONS  AMR Sensor with 180° period  high accuracy  high resolution  for the use at moderate field

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ES2AF THRU ES2JF Glass Passivated Super Fast Rectifier Reverse Voltage - 50 to 600 V Forward Current - 2 A Features • Glass Passivated Chip Juntion •

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tm • • • • • • • • • TE CH T431616B SDRAM FEATURES +2.7 to +3.6V power supply Dual banks operation LVTTL compatible with multiplexed address All in

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ESMT SDRAM M12L16161A (2Q) Operation Temperature Condition -40°C~85°C 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION z JEDEC

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MM3Z2V2B~MM3Z39B SILICON PLANAR ZENER DIODES Features • Total power dissipation : max. 300 mW • Small plastic package suitable for surface mounted des

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