Medium-power Datasheet | Specifications & PDF Download

MITSUBISHI DIODE MODULES RM50TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM50TC-M,-H,-24,-2H • IO • VRRM DC output current

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DISCRETE SEMICONDUCTORS DATA SHEET M3D110 www.DataSheet.net/ BC140; BC141 NPN medium power transistors Product specification Supersedes data of Sep

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www.vishay.com VS-1N1 A, VS-1N36..A Series Vishay Semiconductors Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A DO-4 (DO-203AA) PRI

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ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 o

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2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay

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ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89

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A Product Line of Diodes Incorporated Green ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > -100V  IC = -5A H

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Features  BVCEO > 50V  BVCEV > 80V Forward Blocking Voltage  IC = 5A high Continuous Collector Current  ICM = 12A Peak Collector Current  Low Sat

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PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 W

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www.DataSheet4U.com ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Pa

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www.DataSheet4U.com RFMD. ® RF3023 and RF3024 Broadband Medium Power SPDT Switches The RF3023 and RF3024 are reflective, singlepole double-throw (SP

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www.vishay.com VS-16RIA Series Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 16 A TO-208AA (TO-48) PRODUCT SUMMARY

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www.vishay.com VS-16RIA Series Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 16 A TO-208AA (TO-48) PRODUCT SUMMARY

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LAB MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) SEME 2N2905A HIGH SPEED MEDIUM POWER PNP SWITCHING

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E2Q0023-38-71 ¡ electronic components This version: Jul. 1998 Previous version: Jan. 1998 KGF1254B/1254 ¡ electronic components KGF1254B/1254 Medium

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Fiber Optics Medium Power BIDI® Optical Standard Module 1310 nm Emitting, 1310 nm Receiving SBM52214x Features • Designed for application in passiv

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Fiber Optics Medium Power BIDI® Optical Standard Module 1310 nm Emitting, 1310 nm Receiving SBM52214x Features • Designed for application in passiv

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Fiber Optics Medium Power BIDI® Optical Standard Module 1310 nm Emitting, 1310 nm Receiving SBM52214x Features • Designed for application in passiv

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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 – APRIL 94 FEATURES * 40 Volt VCEO * Gain of 200 at IC=1 Amps * Very low saturation volta

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MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications.

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