MegaBit Datasheet | Specifications & PDF Download

Am29PL160C Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG )XM

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XM25QH128A XM25QH128A preliminary 128 Megabit 3V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES  Single power supply operation - Full vo

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FINAL Am29F016 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 Volt ± 10% for read and

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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EN25S80 EN25S80 8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 1.65-1.9

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Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns • Internal Erase/Program Control •• Sector Architecture

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Features • Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas

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www.DataSheet4U.com Features • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu

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Am29LV160D 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operat

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture – Thirty-one 32K Word (64K B

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Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture –

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 45 ns • Internal Program Control and Timer • 8K bytes Boot Bl

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Features • Complies with Intel Low-Pin Count (LPC) Interface Specification Revision 1.1 – Supports both Firmware Hub (FWH) and LPC Memory Read and Wri

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Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K

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Features • Single-voltage Operation • • • – 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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