OD-666 Datasheet | Specifications & PDF Download

NP6666D6 N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6666D6 uses advanced trench technology to provide excellent RD

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Accessories for pluggable interface relays CR-U Pluggable function modules Data sheet Features ½ Pluggable function modules for mounting on standard s

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N-Channel Enhancement Mode Power MOSFET 2N6660 Hermetic Metal TO39 (TO-205AD) Package VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω Fast Switching, Low CISS

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Macroblock Preliminary Datasheet MBI6662 60V/2A, Common Anode Step-Down LED Driver Features  Maximum 2A constant output current  >95% efficienc

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VS6663CC Features • 1280 x 960 1.3 Mpixel resolution sensor • Compact size: 6.5 mm x 6.5 mm x 4.1 mm • Short focus distance: 5cm • MIPI CSI-2(a) (D-P

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2N6660 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling •

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Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of

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HIGH-POWER GaAlAs IRLED ILLUMINATOR FEATURES • • • • • • High reliability LPE GaAlAs IRLEDs Ultra high power output 880nm peak emission Six chips conn

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a FEATURES Tri-Mode Operation 3.3 V, 5 V Fixed or +1.3 V to +16 V Adjustable Low Power CMOS: 9 µ A max Quiescent Current High Current 100 mA Output Lo

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Schottky Barrier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot 20V Electrical

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2N6660X MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATUR

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TQM666017 Data Sheet 3V PCS Band WCDMA PA-Duplexer-Module Functional Block Diagram Features • • • • • • • • • • Handset power amplifier PA / Duplexer

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VS6663CD Features • 1280 x 960 1.3 Mpixel resolution sensor • Compact size: 6.5 mm x 6.5 mm x 4.1 mm • Short focus distance: 15 cm • MIPI CSI-2(a) (D

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low

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2N6661 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling •

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YJQ4666B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2

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AOD66620 60V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON)

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