HIGH-POWER GaAlAs IRLED ILLUMINATOR FEATURES • .
natlinear
NP6666D6 - N And P-Channel Enhancement Mode MOSFET
NP6666D6 N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6666D6 uses advanced trench technology to provide excellent RD.
Mosel Vitelic Corp
V826664G24S - 512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64
MOSEL VITELIC V826664G24S 512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64 PRELIMINARY Features ■ JEDEC 200 Pin DDR Unbuffered Small-Outline,.
STMicroelectronics
VS6663CC - 1.3 megapixel camera module
VS6663CC Features • 1280 x 960 1.3 Mpixel resolution sensor • Compact size: 6.5 mm x 6.5 mm x 4.1 mm • Short focus distance: 5cm • MIPI CSI-2(a) (D-P.
natlinear
NP6661BQR - N And P-Channel Enhancement Mode MOSFET
NP6661BQR N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6661BQR uses advanced trench technology to provide excellent .
Mosel Vitelic Corp
V826664K24S - 2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
MOSEL VITELIC V826664K24S 2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE PRELIMINARY Features ■ 184 Pin Unbuffered 67,108,864 x 64 .
Macroblock
MBI6662 - Common Anode Step-Down LED Driver
Macroblock Preliminary Datasheet MBI6662 60V/2A, Common Anode Step-Down LED Driver Features Maximum 2A constant output current >95% efficienc.
Seme LAB
2N6661 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low .
apm
apm6668 - Wi-Fi 802.11 b/g/n & Dual Mode BLE Dual Radio Module
apm6668 Wi-Fi 802.11 b/g/n & Dual mode BLE Dual Radio Module Pre-Production Information Data Sheet apm6668 Wi-Fi 802.11 b/g/n & Dual Mode BLE Dual Ra.
Microchip
2N6660 - N-Channel Enhancement-Mode Vertical DMOS FET
2N6660 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • .
Seme LAB
2N6660 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low .
Microchip
2N6661 - N-Channel Enhancement-Mode Vertical DMOS FET
2N6661 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • .
Supertex Inc
2N6660 - N-Channel Enhancement-Mode Vertical DMOS FETs
Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of .
Supertex Inc
2N6661 - N-Channel Enhancement-Mode Vertical DMOS FETs
Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of .
Analog Devices
ADM666A - Tri-Mode: +3.3 V/ +5 V/ Adjustable Micropower Linear Voltage Regulators
a FEATURES Tri-Mode Operation 3.3 V, 5 V Fixed or +1.3 V to +16 V Adjustable Low Power CMOS: 9 µ A max Quiescent Current High Current 100 mA Output Lo.
Seme LAB
2N6660X - N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
2N6660X MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATUR.
Maxim Integrated Products
MAX6666 - High-Accuracy PWM Output Temperature Sensors
19-2138; Rev 3; 8/09 High-Accuracy PWM Output Temperature Sensors General Description The MAX6666/MAX6667 are high-accuracy, low-cost, low-power temp.
