NP6661BQR N And P-Channel Enhancement Mode MOSFET

Description

NP6661BQR N And P-Channel Enhancement Mode MOSFET .
Schematic diagram The NP6661BQR uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

📥 Download Datasheet

NP6661BQR Datasheet Preview — Preview of NP6661BQR PDF

Datasheet Specifications

Part number: NP6661BQR
Manufacturer: natlinear
File Size: 557.78 KB
Datasheet: NP6661BQR-natlinear.pdf
Description: N And P-Channel Enhancement Mode MOSFET

Features

* N-channel： VDS =30V，ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-10A RDS(ON)=20mΩ (typical) @ VGS=-10V RDS(ON)=29mΩ (typical) @ VGS=-4.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistance RDS(ON)
* 15

NP6661BQR Distributors

📁 Related Datasheet

NP60N03KUG NP60N03SUG NP60N04KUG NP60N04MUG NP60N04MUK NP60N04NUK

📌 All Tags

NP6661BQR And P-Channel Enhancement Mode MOSFET natlinear

natlinear NP6661BQR-like datasheet