NP6608D6 N And P-Channel Enhancement Mode MOSFET

Description

NP6608D6 N And P-Channel Enhancement Mode MOSFET .
Schematic diagram The NP6608D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number: NP6608D6
Manufacturer: natlinear
File Size: 752.16 KB
Datasheet: NP6608D6-natlinear.pdf
Description: N And P-Channel Enhancement Mode MOSFET

Features

* N-channel： VDS =20V，ID =8A RDS(ON)=9.5mΩ (typical) @ VGS=4.5V RDS(ON)=13mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V，ID =-8A RDS(ON)=14mΩ (typical) @ VGS=-4.5V RDS(ON)=18mΩ (typical) @ VGS=-2.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistance RDS(ON)

NP6608D6 Distributors

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NP6608D6 And P-Channel Enhancement Mode MOSFET natlinear

natlinear NP6608D6-like datasheet