NP6008BSR 60V N-Channel Enhancement Mode MOSFET

Description

NP6008BSR 60V N-Channel Enhancement Mode MOSFET .
Schematic diagram The NP6008BSR uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching pe.

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Datasheet Specifications

Part number: NP6008BSR
Manufacturer: natlinear
File Size: 360.89 KB
Datasheet: NP6008BSR-natlinear.pdf
Description: 60V N-Channel Enhancement Mode MOSFET

Features

* Marking and pin assignment
* VDS =60V，ID =8A RDS(ON)(Typ. )=32mΩ @VGS=10V RDS(ON)(Typ. )=39mΩ @VGS=4.5V
* Excellent gate charge RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature

Applications

* SOP-8 Top View Bottom View D D D D NP6X0XY0XY8XYY G S S S XXXX
* Wafer Information YYYY
* Quality Code Ordering Information Part Number NP6008BSR -G Storage Temperature -55°C to +150°C Package SOP-8 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-

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NP6008BSR 60V N-Channel Enhancement Mode MOSFET natlinear

natlinear NP6008BSR-like datasheet