Datasheet Details
Part number:
NP6008BSR
Manufacturer:
natlinear
File Size:
360.89 KB
Description:
60V N-Channel Enhancement Mode MOSFET
Features
* Marking and pin assignment
* VDS =60V，ID =8A RDS(ON)(Typ.)=32mΩ @VGS=10V RDS(ON)(Typ.)=39mΩ @VGS=4.5V
* Excellent gate charge RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* 100% UIS tested Application HF Pb
* Synchronus Rectific
NP6008BSR, 60V N-Channel Enhancement Mode MOSFET
Schematic diagram The NP6008BSR uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for hi
NP6008BSR Distributor
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