NP60S04D6-Sn Datasheet (natlinear) - 40V N-Channel Enhancement Mode MOSFET

NP60S04D6-Sn, 40V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP60S04D6-Sn uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-freque

NP60S04D6-Sn Features

* Marking and pin assignment

* VDS =40V，ID =60A RDS(ON)(Typ.)= 5.9mΩ @VGS=10V RDS(ON)(Typ.)= 8.9mΩ @VGS=4.5V

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* 100% UIS tested Application PDFN5

* 6-8L-A NP60S04D6 XXXXX YYYYY

* Synchronus Rectification in DC/DC