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NP6601AMR 30V N And P-Channel Enhancement Mode MOSFET

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Description

NP6601AMR 30V N And P-Channel Enhancement Mode MOSFET .
Schematic diagram The NP6601AMR uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number
NP6601AMR
Manufacturer
natlinear
File Size
861.45 KB
Datasheet
NP6601AMR-natlinear.pdf
Description
30V N And P-Channel Enhancement Mode MOSFET

Features

* N-channel: VDS =30V,ID =4A RDS(ON)=31.3mΩ (typical) @ VGS=4.5V RDS(ON)=43.8mΩ (typical) @ VGS=2.5V P-Channel: VDS =-30V,ID =-4A RDS(ON)=54.4mΩ (typical) @ VGS=-4.5V RDS(ON)=68.5mΩ (typical) @ VGS=-2.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistance RDS(ON)

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