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NP6667SR N And P-Channel Enhancement Mode MOSFET

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Description

NP6667SR N And P-Channel Enhancement Mode MOSFET .
Schematic diagram The NP6667SR uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number
NP6667SR
Manufacturer
natlinear
File Size
511.82 KB
Datasheet
NP6667SR-natlinear.pdf
Description
N And P-Channel Enhancement Mode MOSFET

Features

* N-channel: VDS =30V,ID =10A RDS(ON)=16mΩ (typical) @ VGS=10V RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Channel: VDS =-30V,ID =-15A RDS(ON)=17.5mΩ (typical) @ VGS=-10V RDS(ON)=24mΩ (typical) @ VGS=-4.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistance RDS(ON)

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