NP6666D6 N And P-Channel Enhancement Mode MOSFET

Description

NP6666D6 N And P-Channel Enhancement Mode MOSFET .
Schematic diagram The NP6666D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number: NP6666D6
Manufacturer: natlinear
File Size: 829.37 KB
Datasheet: NP6666D6-natlinear.pdf
Description: N And P-Channel Enhancement Mode MOSFET

Features

* N-channel： VDS =30V，ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-30A RDS(ON)=14mΩ (typical) @ VGS=-10V RDS(ON)=19mΩ (typical) @ VGS=-4.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistance RDS(ON)
* 150 °C

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NP6666D6 And P-Channel Enhancement Mode MOSFET natlinear

natlinear NP6666D6-like datasheet