NP6020D6-Sn Datasheet (natlinear) - 60V N-Channel Enhancement Mode MOSFET

NP6020D6-Sn, 60V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP6020D6-Sn uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for

NP6020D6-Sn Features

* Marking and pin assignment

* VDS =60V，ID =20A RDS(ON)(Typ.)=18.5mΩ @VGS=10V RDS(ON)(Typ.)=22 mΩ @VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* 100% UIS tested Application

* Synchronus Rectification