NP60S10D6 100V N-Channel Enhancement Mode MOSFET

Description

NP60S10D6 100V N-Channel Enhancement Mode MOSFET .
Schematic diagram The NP60S10D6 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: NP60S10D6
Manufacturer: natlinear
File Size: 656.52 KB
Datasheet: NP60S10D6-natlinear.pdf
Description: 100V N-Channel Enhancement Mode MOSFET

Features

* VDS =100V，ID =60A RDS(ON)(Typ. )=4.6mΩ @VGS=10V RDS(ON)(Typ. )=6.5mΩ @VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature

Applications

* XXXX
* Wafer Information YYYY
* Quality Code Ordering Information Part Number NP60S10D6-G Storage Temperature -55°C to +150°C Package PDFN5
* 6-8L-A Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Continuous Drain Cur

NP60S10D6 Distributors

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NP60S10D6 100V N-Channel Enhancement Mode MOSFET natlinear

natlinear NP60S10D6-like datasheet