NP60S10D6 Datasheet (natlinear) - 100V N-Channel Enhancement Mode MOSFET

NP60S10D6, 100V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP60S10D6 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency

NP60S10D6 Features

* VDS =100V，ID =60A RDS(ON)(Typ.)=4.6mΩ @VGS=10V RDS(ON)(Typ.)=6.5mΩ @VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* 100% UIS tested Marking and pin assignment Application

* Synchronus Rectification