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NP60S10D6

100V N-Channel Enhancement Mode MOSFET

NP60S10D6 Features

* VDS =100V，ID =60A RDS(ON)(Typ.)=4.6mΩ @VGS=10V RDS(ON)(Typ.)=6.5mΩ @VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* 100% UIS tested Marking and pin assignment Application

* Synchronus Rectification

NP60S10D6 General Description

Schematic diagram The NP60S10D6 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NP60S10D6 Datasheet (656.52 KB)

Preview of NP60S10D6 PDF

Datasheet Details

Part number:

NP60S10D6

Manufacturer:

natlinear

File Size:

656.52 KB

Description:

100v n-channel enhancement mode mosfet.

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NP60S10D6 100V N-Channel Enhancement Mode MOSFET natlinear

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