P30N06 Datasheet | Specifications & PDF Download

STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI www.DataSheet4U.com s s s s s s s s V DSS 60 V 60 V R

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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RFP30N06LE, RF1S30N06LESM Data Sheet April 1999 File Number 3629.2 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Ch

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RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power

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FQP30N06L — N-Channel QFET® MOSFET FQP30N06L N-Channel QFET® MOSFET 60 V, 32 A, 35 mΩ Description This N-Channel enhancement mode power MOSFET is pro

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www.DataSheet4U.com NTP30N06L, NTB30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level N–Channel TO–220 and D2PAK Designed for low voltage, high speed

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Data Sheet NP30N06QDK 60 V – 30 A – Dual N-channel Power MOS FET Application: Automotive R07DS1332EJ0200 Rev.2.00 May 24, 2018 Description NP29N06Q

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STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.05 Ω <

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www.DataSheet4U.com DFP30N06 N-Channel MOSFET Features Low RDS(on) (0.04 )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv

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SemiWell Semiconductor SFP30N06 N-Channel MOSFET Features ■ ■ Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) I

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technolog

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STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.05 Ω <

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NTP30N06, NTB30N06 Power MOSFET 30 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power sup

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AP30N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06NF uses advanced trench technology to provide excellent RDS(ON), low gate charg

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FQP30N06 QFET FQP30N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fa

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www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataShee DataSheet4U.com DataShe

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