P4N60 Datasheet | Specifications & PDF Download

DTP4N60/DTP4N60F/DTU4N60/DTL4N60 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 6

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FQP4N60 April 2000 QFET FQP4N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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isc N-Channel MOSFET Transistor IXTP4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltag

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DTP4N60/DTP4N60F/DTU4N60/DTL4N60 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 6

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d

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FQP4N60/FQPF4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQP4N60 & FQPF4N60 have been fabricated using an advanced high vo

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HFP4N60F July 2015 HFP4N60F 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Techn

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www.DataSheet4U.com DFP4N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typica

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4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs

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FCP4N60 600V N-Channel MOSFET FCP4N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 1.0Ω • Ultra low gate charge (typ. Qg = 12.8

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

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N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications      SMPS PFC

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HFP4N60 June 2005 HFP4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 4.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanch

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N R N-CHANNEL MOSFET MP4N60ER MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 4A 600V 2.5Ω 13nC    LED APPLICATIONS

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SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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www.DataSheet4U.com Wisdom Semiconductor WFP4N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Impro

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Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 4N60 GFP 4N60 General description  These N-channel enhancement mode power field e

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