www.DataSheet4U.com Advanced Power MOSFET FEATURE.
Fairchild Semiconductor
P4N60 - SSP4N60
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.
Samsung Electronics
SSP4N60 - (SSP4N55 / SSP4N60) N-Channel Power MOSFET
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
angstrem
ANP4N60B - N-Chanel Power MOSFET
N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications SMPS PFC.
HAOHAI
FQP4N60C - N-Channel MOSFET
4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs .
Oucan Semi
FQP4N60 - 4A N-Channel MOSFET
FQP4N60/FQPF4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQP4N60 & FQPF4N60 have been fabricated using an advanced high vo.
Maple Semiconductor
SLP4N60S - N-Channel MOSFET
SLP4N60S/SLF4N60S SLP4N60S/SLF4N60S 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe.
Wing On
PFP4N60E - N-Channel MOSFET
PFP4N60E / PFF4N60E FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarka.
Fairchild Semiconductor
FQP4N60 - 600V N-Channel MOSFET
FQP4N60 April 2000 QFET FQP4N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.
Fairchild Semiconductor
SSP4N60B - 600V N-Channel MOSFET
SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro.
Fairchild Semiconductor
SSP4N60AS - Advanced Power MOFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
Maple Semiconductor
SLP4N60C - N-Channel MOSFET
SLP4N60C / SLF4N60C SLP4N60C / SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st.
Fairchild Semiconductor
FCP4N60 - N-Channel MOSFET
FCP4N60 600V N-Channel MOSFET FCP4N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 1.0Ω • Ultra low gate charge (typ. Qg = 12.8.
DnI
DFP4N60 - N-Channel MOSFET
www.DataSheet4U.com DFP4N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typica.
TRinno
TMP4N60AZG - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improve.
Samsung Electronics
SSP4N55 - (SSP4N55 / SSP4N60) N-Channel Power MOSFET
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
IXYS
IXTP4N60P - PolarHV Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d.
Pan Jit International
PJP4N60 - 600V N-Channel Enhancement Mode MOSFET
PJP4N60 / PJF4N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 4A , 600V, RDS(ON)=2.4Ω@VGS=10V, ID=2.0A • • • • • • Low ON Resistance Fast Switch.
PowerGate
PFP4N60 - N-channel MOSFET
PFP4N60/PFF4N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typ. 27nC) ■ Improved dv/dt Capability ■ 100%.
MagnaChip
MDP4N60 - N-Channel MOSFET
MDP4N60/MDF4N60 N-channel MOSFET 600V MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced usin.
Chinahaiso electronic
GFP4N60 - N-channel enhancement mode power field effect Transistors
Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 4N60 GFP 4N60 General description These N-channel enhancement mode power field e.