P4N60 Datasheet | Specifications & PDF Download

DTP4N60/DTP4N60F/DTU4N60/DTL4N60 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 6

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PFP4N60/PFF4N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typ. 27nC) ■ Improved dv/dt Capability ■ 100%

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FQP4N60/FQPF4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQP4N60 & FQPF4N60 have been fabricated using an advanced high vo

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PFP4N60E / PFF4N60E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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N R N-CHANNEL MOSFET MP4N60ER MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 4A 600V 2.5Ω 13nC    LED APPLICATIONS

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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MDP4N60/MDF4N60 N-channel MOSFET 600V MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced usin

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FQP4N60 April 2000 QFET FQP4N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP4N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Sil

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Si

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DTP4N60/DTP4N60F/DTU4N60/DTL4N60 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 6

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isc N-Channel MOSFET Transistor IXTP4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltag

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SLP4N60S/SLF4N60S SLP4N60S/SLF4N60S 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d

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HFP4N60 June 2005 HFP4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 4.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanch

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www.DataSheet4U.com DFP4N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typica

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HFP4N60F July 2015 HFP4N60F 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Techn

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