P4N60 Datasheet | Specifications & PDF Download

FQP4N60/FQPF4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQP4N60 & FQPF4N60 have been fabricated using an advanced high vo

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FQP4N60 April 2000 QFET FQP4N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs

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FCP4N60 600V N-Channel MOSFET FCP4N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 1.0Ω • Ultra low gate charge (typ. Qg = 12.8

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N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications      SMPS PFC

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www.DataSheet4U.com DFP4N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typica

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HFP4N60 June 2005 HFP4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 4.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanch

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isc N-Channel MOSFET Transistor IXTP4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltag

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DTP4N60/DTP4N60F/DTU4N60/DTL4N60 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 6

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 4N60 GFP 4N60 General description  These N-channel enhancement mode power field e

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HFP4N60F July 2015 HFP4N60F 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Techn

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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TSP4N60M/TSF4N60M TSP4N60M/TSF4N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe

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DTP4N60/DTP4N60F/DTU4N60/DTL4N60 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 6

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Si

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

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PFP4N60/PFF4N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typ. 27nC) ■ Improved dv/dt Capability ■ 100%

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N R N-CHANNEL MOSFET MP4N60ER MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 4A 600V 2.5Ω 13nC    LED APPLICATIONS

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