www.DataSheet4U.com STP50N06 STP50N06FI N - CHANN.
INCHANGE
RFP50N06 - N-Channel MOSFET
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance :.
CET
CEP50N06 - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low .
STMicroelectronics
P50N06 - STP50N06
www.DataSheet4U.com STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI s s s s s s s s V DSS 60 V 60 V .
Fairchild Semiconductor
FQP50N06 - 60V N-Channel MOSFET
FQP50N06 QFET FQP50N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fa.
Cmos
CMP50N06 - N-Channel 60V 45A Power MOSFET
CMB50N06/CMP50N06 N-Channel 60V 45A Power MOSFET General Description Product Summery The 50N06 is extremely high-density N-channel MOSFET, which p.
Winsemi
SFP50N06 - Silicon N-Channel MOSFET
SFP50N06 Silicon N-Channel MOSFET Features ■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalan.
Feihonltd
FHP50N06 - power MOS FET
FHP50N06 Ӂ૭ඍ Ӂหׄ ')1/ູ֮նੀੱۿ.04ӆིႋܵ " 7 3%4 PO Ȥ!7(4 7 ܼٗႋႨႿჷэఖ षܱ؇ॹ * '6 72 ࠞཋᆴ 5$ ¥ ҕඔӫ ࠞჷ.
INCHANGE
FQP50N06 - N-Channel MOSFET
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance :.
Winsemi
WFP50N06 - Silicon N-Channel MOSFET
Features ■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Tempe.
SEMIHOW
HP50N06 - 60V N-Channel MOSFET
HP50N06 July 2005 HP50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 23 mΩ ID = 50 A FEATURES Originative New Design Superior Avalanche Rugge.
Chinahaiso electronic
GFP50N06 - MOSFET
Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typic.
TEMIC
SUP50N06-18 - N-Channel MOSFET
TEMIC Siliconix SUP/SUB50N06-18 N-Channel Enhancement-Mode lransistor 175°C Maximum Junction Temperature Product Summary V(BR)DSS (V) 60 rDS(on.
SemiWell Semiconductor
SFP50N06 - N-Channel MOSFET
SemiWell Semiconductor SFP50N06 N-Channel MOSFET Features ■ ■ Low RDS(on) (0.023 Ω )@VGS=10V Low Gate Charge (Typical 39nC) Low Crss (Typical 110pF.
APM
AP50N06D - 60V N-Channel Enhancement Mode MOSFET
sales.Mr.wang13826508770 www.sztssd.com Description AP50N06D 60V N-Channel Enhancement Mode MOSFET The AP50N06D uses advanced trench technology to .
Fairchild Semiconductor
RFP50N06 - N-Channel MOSFET
Data Sheet September 2013 RFP50N06 N-Channel Power MOSFET 60V, 50A, 22 mΩ These N-Channel power MOSFETs are manufactured using the MegaFET process..
SemiHow
HFP50N06 - 60V N-Channel MOSFET
www.DataSheet4U.com HFP50N06 July 2005 BVDSS = 60 V HFP50N06 60V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche R.
HUASHAN ELECTRONIC
HFP50N06V - N-Channel Enhancement Mode Field Effect Transistor
Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06V N-Channel Enhancement Mode Field Effect Transistor █ Applications • Servo motor control. • DC.
SemiHow
HRP50N06K - N-Channel MOSFET
HRP50N06K HRP50N06K 60V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Charac.
