P50N06 Datasheet | Specifications & PDF Download

FQP50N06L — N-Channel QFET® MOSFET FQP50N06L N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is p

Rating: 1 ★ (9 votes)

N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low

Rating: 1 ★ (7 votes)

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs These N-Cha

Rating: 1 ★ (6 votes)

FQP50N06 QFET FQP50N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fa

Rating: 1 ★ (6 votes)

www.DataSheet4U.com STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI s s s s s s s s V DSS 60 V 60 V

Rating: 1 ★ (6 votes)

Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typic

Rating: 1 ★ (5 votes)

Rating: 1 ★ (5 votes)

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technolog

Rating: 1 ★ (5 votes)

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06V/D TMOS Power Field Effect Transistor TMOS V is a new technology d

Rating: 1 ★ (5 votes)

Rating: 1 ★ (5 votes)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance :

Rating: 1 ★ (5 votes)

MOSFET – Power, N-Channel 60 V, 50 A, 22 mW RFP50N06 These N−Channel power MOSFETs are manufactured using the MegaFET process. This process, which u

Rating: 1 ★ (5 votes)

sales.Mr.wang13826508770 www.sztssd.com Description AP50N06D 60V N-Channel Enhancement Mode MOSFET The AP50N06D uses advanced trench technology to

Rating: 1 ★ (5 votes)

TEMIC Siliconix SUP/SUB50N06-18 N-Channel Enhancement-Mode lransistor 175°C Maximum Junction Temperature Product Summary V(BR)DSS (V) 60 rDS(on

Rating: 1 ★ (4 votes)

TSP50N06M / TSF50N06M 60V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

Rating: 1 ★ (4 votes)

FQP50N06L — N-Channel QFET® MOSFET FQP50N06L N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is p

Rating: 1 ★ (4 votes)

FQP50N06 ® FQP50N06 Pb Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V

Rating: 1 ★ (4 votes)

HFP50N06A Oct 2015 HFP50N06A 60V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Techn

Rating: 1 ★ (4 votes)

HP50N06 July 2005 HP50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 23 mΩ ID = 50 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugge

Rating: 1 ★ (4 votes)

www.DataSheet4U.com DFP50N06 N-Channel MOSFET Features RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedn

Rating: 1 ★ (4 votes)