QFET $ $ $ .
FQP7N80C - N-Channel MOSFET
FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET FQP7N80C / FQPF7N80C N-Channel QFET® MOSFET 800 V, 6.6 A, 1.9 Ω December 2013 Description This N-Chan.FQP7N80 - 800V N-Channel MOSFET
QFET $ $ $ $ $ $ % %& '(() * + , -Ω .) + ,( ) / 0 1( 2 / 0 ,3.HFP7N80 - N-Channel Enhancement Mode Field Effect Transistor
Shantou Huashan Electronic Devices Co., Ltd. HFP7N80 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel e.TSP7N80M - N-Channel MOSFET
TSP7N80M / TSF7N80M TSP7N80M / TSF7N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar str.DTP7N80 - N-Channel MOSFET
DTP7N80/DTP7N80F www.din-tek.jp N-Channel 800V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration.SLP7N80C - N-Channel MOSFET
SLP7N80C / SLF7N80C SLP7N80C / SLF7N80C 800V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st.SSP7N80A - Advanced Power MOSFET
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.IXFP7N80PM - Power MOSFET
PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP7N80PM VDSS ID25 RDS.DTP7N80FSJ - N-Channel Super Junction Power MOSFET
DTP7N80SJ/DTP7N80FSJ/DTU7N80SJ/DTL7N80SJ ZZZGLQ WHNMS /$IBOOFM807 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RD.STP7N80K5 - N-channel Power MOSFET
STD7N80K5, STP7N80K5, STU7N80K5 Datasheet N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1 TA.SSFP7N80 - Power MOSFET
SSFP7N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ G.PFP7N80 - N-Channel MOSFET
June 2007 PFP7N80 / PFF7N80 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances .PFP7N80E - N-Channel MOSFET
PFP7N80E / PFF7N80E FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarka.DTP7N80F - N-Channel MOSFET
DTP7N80/DTP7N80F www.din-tek.jp N-Channel 800V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration.STP7N80Z - N-Channel MOSFET
www.DataSheet4U.com N-CHANNEL 800V - 1.3Ω - 6.1A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ III MOSFET TYPE STP7NC80Z/FP STB7NC80Z-1 s s STP7N.IXFP7N80P - Power MOSFET
PolarTM HiPerFETTM Power MOSFET IXFA7N80P IXFP7N80P VDSS ID25 trr RDS(on) = 800V = 7A ≤ 1.44Ω ≤ 250ns N-Channel Enhancement Mode Avalanche Rated .P7N80C - FQP7N80C
FQP7N80C/FQPF7N80C QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors .P7N80 - FQP7N80
QFET $ $ $ $ $ $ % %& '(() * + , -Ω .) + ,( ) / 0 1( 2 / 0 ,3.DTP7N80SJ - N-Channel Super Junction Power MOSFET
DTP7N80SJ/DTP7N80FSJ/DTU7N80SJ/DTL7N80SJ ZZZGLQ WHNMS /$IBOOFM807 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RD.HFP7N80 - N-Channel MOSFET
HFP7N80 June 2005 HFP7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 7.0 A FEATURES Originative New Design Superior Avalanc.