P7N80 Datasheet | Specifications & PDF Download

 
 
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FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET FQP7N80C / FQPF7N80C N-Channel QFET® MOSFET 800 V, 6.6 A, 1.9 Ω December 2013 Description This N-Chan

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PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP7N80PM VDSS ID25 RDS

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SSFP7N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ G

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www.DataSheet4U.com N-CHANNEL 800V - 1.3Ω - 6.1A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ III MOSFET TYPE STP7NC80Z/FP STB7NC80Z-1 s s STP7N

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PolarTM HiPerFETTM Power MOSFET IXFA7N80P IXFP7N80P VDSS ID25 trr RDS(on) = 800V = 7A ≤ 1.44Ω ≤ 250ns N-Channel Enhancement Mode Avalanche Rated

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FQP7N80C/FQPF7N80C QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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HFP7N80 June 2005 HFP7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 7.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanc

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DTP7N80/DTP7N80F www.din-tek.jp N-Channel 800V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration

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DTP7N80/DTP7N80F www.din-tek.jp N-Channel 800V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration

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STD7N80K5, STP7N80K5, STU7N80K5 Datasheet N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1 TA

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Shantou Huashan Electronic Devices Co., Ltd. HFP7N80 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel e

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PFP7N80E / PFF7N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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SLP7N80C / SLF7N80C SLP7N80C / SLF7N80C 800V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st

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Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RD

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TSP7N80M / TSF7N80M TSP7N80M / TSF7N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar str

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June 2007 PFP7N80 / PFF7N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RD

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

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