IRTP-300L (Smart Meter)
Infrared Temperature Probe Technical Parameter
Smart-IRTP-300L
Smart-IRTP-300L
,
Smart-IR
,
,,,
,
,
Smart-IRTP-300L
:
: Smart-IRTP-300L
: -20-300°C, 0-100°C 0-150°C, 0-300°C(
: -10- 70 °C
(51 views)
KD210A1 (Saransk)
The letter designation of parameters for rectifier diodes
КД210А1, КД210Б1, КД210В1, КД210Г1
Буквенное обозначение параметров для выпрямительных диодов Uобр.и.max - максимально допустимое импульсное напряжен
(25 views)
IRTP300L (WOOHE)
infrared temperature probe technical parameters
IRTP300L
IRTP300L
IRTP300L ，，，， 。，,，， 。
：,,,,, ； ：、、；、,、 .
IRTP300L :
: IRTP300L
: -20-300°C
: -10- 70 °C
: -20-80 °C
： 300ms（95%）
: 25 :1
(24 views)
MR16R1628DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(21 views)
MR18R1624GEG0 (Samsung semiconductor)
Key Timing Parameters
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Change History
Version 0.1 (December 2003) - Preliminary
* First copy. * Based on the 1.0 ver. (July 2002) 256/288
(21 views)
MR18R1628DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(20 views)
MR18R162GDF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(20 views)
MR16R1622DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(19 views)
MR16R162GDF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(19 views)
MR18R162GDF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(19 views)
MR16R1624DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(19 views)
MR16R162GDF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(19 views)
MR16R1624DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(18 views)
MR18R1628DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(18 views)
MR18R1624DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(18 views)
MR18R1628GEG0 (Samsung semiconductor)
Key Timing Parameters
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Change History
Version 0.1 (December 2003) - Preliminary
* First copy. * Based on the 1.0 ver. (July 2002) 256/288
(18 views)
MR16R1628GEG0 (Samsung semiconductor)
Key Timing Parameters
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Change History
Version 0.1 (December 2003) - Preliminary
* First copy. * Based on the 1.0 ver. (July 2002) 256/288
(18 views)
MR18R1622DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(17 views)
MR18R1622DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(17 views)
MR16R1628DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(17 views)
