.
Vishay
SI7431DP_RC - R-C Thermal Model Parameters
Si7431DP_RC Vishay Siliconix www.DataSheet4U.com R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been d.
Vishay Siliconix
SI7415DN-RC - R-C Thermal Model Parameters
www.DataSheet4U.com Si7415DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been .
Vaishali Semiconductor
SI5484DU-RC - R-C Thermal Model Parameters
www.DataSheet4U.com Si5484DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been .
Vaishali Semiconductor
SI4684DY_RC - R-C Thermal Model Parameters
Si4684DY_RC Vishay Siliconix www.DataSheet4U.com R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been d.
Vishay
SI4496DY - R-C Thermal Parameters
www.DataSheet.co.kr Si4496DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been .
Saransk
KD210A1 - The letter designation of parameters for rectifier diodes
КД210А1, КД210Б1, КД210В1, КД210Г1 Буквенное обозначение параметров для выпрямительных диодов Uобр.и.max - максимально допустимое импульсное напряжен.
WOOHE
IRTP300L - infrared temperature probe technical parameters
IRTP300L IRTP300L IRTP300L ，，，， 。，,，， 。 ：,,,,, ； ：、、；、,、 . IRTP300L : : IRTP300L : -20-300°C : -10- 70 °C : -20-80 °C ： 300ms（95%） : 25 :1 .
Smart Meter
IRTP-300L - Infrared Temperature Probe Technical Parameter
Smart-IRTP-300L Smart-IRTP-300L , Smart-IR , ,,, , , Smart-IRTP-300L : : Smart-IRTP-300L : -20-300°C, 0-100°C 0-150°C, 0-300°C( : -10- 70 °C.
Etc
APD032 - PACKAGE MECHANICAL SPECIFICATIONS AND PARAMETERS
INTRODUCTION PACKAGE MECHANICAL SPECIFICATIONS AND PARAMETERS 1. Parameter Definitions: A = Distance from top of chip to top of glass. a = Photodiode .
ST Microelectronics
AN302 - THYRISTORS AND TRIACS / AN IMPORTANT PARAMETER
w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
Samsung semiconductor
MR16R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR16R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR16R1628DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR16R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R1628DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.