IRTP-300L (Smart Meter)
Infrared Temperature Probe Technical Parameter
Smart-IRTP-300L
Smart-IRTP-300L
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Smart-IR
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Smart-IRTP-300L
:
: Smart-IRTP-300L
: -20-300°C, 0-100°C 0-150°C, 0-300°C(
: -10- 70 °C
(75 views)
KD210A1 (Saransk)
The letter designation of parameters for rectifier diodes
КД210А1, КД210Б1, КД210В1, КД210Г1
Буквенное обозначение параметров для выпрямительных диодов Uобр.и.max - максимально допустимое импульсное напряжен
(39 views)
MR16R1624DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(37 views)
SI4496DY (Vishay)
R-C Thermal Parameters
www.DataSheet.co.kr
Si4496DY_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been
(36 views)
AN302 (ST Microelectronics)
THYRISTORS AND TRIACS / AN IMPORTANT PARAMETER
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(34 views)
MR16R1622DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(33 views)
MR18R1624GEG0 (Samsung semiconductor)
Key Timing Parameters
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Change History
Version 0.1 (December 2003) - Preliminary
* First copy. * Based on the 1.0 ver. (July 2002) 256/288
(33 views)
MR16R1628GEG0 (Samsung semiconductor)
Key Timing Parameters
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Change History
Version 0.1 (December 2003) - Preliminary
* First copy. * Based on the 1.0 ver. (July 2002) 256/288
(33 views)
MR16R162GDF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(32 views)
IRTP300L (WOOHE)
infrared temperature probe technical parameters
IRTP300L
IRTP300L
IRTP300L ，，，， 。，,，， 。
：,,,,, ； ：、、；、,、 .
IRTP300L :
: IRTP300L
: -20-300°C
: -10- 70 °C
: -20-80 °C
： 300ms（95%）
: 25 :1
(31 views)
MR18R1622DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(31 views)
SI7415DN-RC (Vishay Siliconix)
R-C Thermal Model Parameters
www.DataSheet4U.com
Si7415DN_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been
(31 views)
MR18R162GDF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(29 views)
MR18R1622DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(29 views)
MR18R1628DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(29 views)
MR16R1628DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(28 views)
MR16R162GDF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(27 views)
MR18R1624DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(27 views)
MR16R1624DF0 (Samsung semiconductor)
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(27 views)
MR18R1628GEG0 (Samsung semiconductor)
Key Timing Parameters
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Change History
Version 0.1 (December 2003) - Preliminary
* First copy. * Based on the 1.0 ver. (July 2002) 256/288
(27 views)
