POLYFET RF DEVICES Datasheet | Specifications & PDF Download

polyfet rf devices P121 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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polyfet rf devices P124 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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polyfet rf devices LX802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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polyfet rf devices P122 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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polyfet rf devices GX3442 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for b

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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www.DataSheet4U.com polyfet rf devices Power RF Amplifiers Power = 10.0 Watts Bandwidth = 380 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Inpu

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polyfet rf devices SR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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www.DataSheet4U.com polyfet rf devices Power RF Amplifiers Power = 5.0 Watts Bandwidth = 225 to 400 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input

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www.DataSheet4U.com polyfet rf devices Power RF Amplifiers Power = 10.0 Watts Bandwidth = 136 to 174 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Inpu

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polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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polyfet rf devices LQ821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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www.DataSheet4U.com polyfet rf devices Power RF Amplifiers Power = 10.0 Watts Bandwidth = 300 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Inpu

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polyfet rf devices LP802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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polyfet rf devices General Description LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband R

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polyfet rf devices SQ741 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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