Linear Technology
LTC2328-16 - Pseudo-Differential Input ADC
LTC2328-16 16-Bit, 1Msps, ±10.24V True Bipolar, Pseudo-Differential Input ADC with 93.5dB SNR
Features
Description
nn 1Msps Throughput Rate nn ±1.5
(14 views)
PSE Technology
G23270006 - Quartz Crystal
PSE Technology Corporation SPECIFICATION FOR APPROVAL
CUSTOMER
NOMINAL FREQUENCY
32.768 KHz
PRODUCT TYPE
G2 Series Cylinder Through Hole Quartz C
(13 views)
Elite Semiconductor Memory Technology
M24L216128DA - 2-Mbit (128K x 16) Pseudo Static RAM
ESMT
PSRAM
Features
‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 1 mA @ f
(13 views)
Linear Technology
LTC4271 - 12-Port PoE/PoE+/LTPoE++ PSE Controller
FEATURES
nn 12 Independent PSE Channels nn Compliant with IEEE 802.3at Type 1 and 2 nn Chipset Provides Electrical Isolation
nn Reduced BOM Cost nn El
(13 views)
Etron Technology Inc.
EM566168 - 1M x 16 Pseudo SRAM
EtronTech
Features
• Organized as 1M words by 16 bits • Fast Cycle Time : 70ns • Standby Current : 100uA • Deep power-down Current : 10uA (Memory cell
(12 views)
Elite Semiconductor Memory Technology
M24L416256DA - 4-Mbit (256K x 16) Pseudo Static RAM
ESMT
PSRAM
Features
• Advanced low-power architecture •High speed: 55 ns, 60 ns and 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1
(12 views)
Elite Semiconductor Memory Technology
M24L816512DA - 8-Mbit (512K x 16) Pseudo Static RAM
ESMT
PSRAM
Features
‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6 V • Typical active current: 2 mA @ f
(12 views)
PSE Technology
G23270023 - Quartz Crystal
PSE Technology Corporation SPECIFICATION FOR APPROVAL
CUSTOMER
NOMINAL FREQUENCY
32.768 KHz
PRODUCT TYPE
G2 Series Cylinder Through Hole Quartz C
(11 views)
Elite Semiconductor Memory Technology
M24L48512SA - 4-Mbit (512K x 8) Pseudo Static RAM
ESMT
PSRAM
www.DataSheet4U.com
M24L48512SA 4-Mbit (512K x 8) Pseudo Static RAM
Features
• • • • • • Advanced low power architecture High speed: 55
(11 views)
Elite Semiconductor Memory Technology
M24L816512SA - 8-Mbit (512K x 16) Pseudo Static RAM
ESMT
PSRAM
Features
‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 2 mA @ f
(11 views)
Linear Technology
LTC4270 - 12-Port PoE/PoE+/LTPoE++ PSE Controller
FEATURES
nn 12 Independent PSE Channels nn Compliant with IEEE 802.3at Type 1 and 2 nn Chipset Provides Electrical Isolation
nn Reduced BOM Cost nn El
(11 views)
Linear Technology
LTC4274C - Single PoE/PoE+/LTPoE++ PSE Controller
FEATURES
nn Compliant with IEEE 802.3at Type 1 and 2 nn Low Power Dissipation
nn 0.25Ω Sense Resistance Per Channel nn Very High Reliability 4-Point P
(11 views)
Linear Technology
LTC2326-16 - Pseudo-Differential Input ADC
LTC2326-16
16-Bit, 250ksps, ±10.24V True Bipolar, Pseudo-Differential
Input ADC with 93.5dB SNR
Features
n 250ksps Throughput Rate n ±1.5LSB INL (Max
(10 views)
PSE Technology
G23270013 - Quartz Crystal
PSE Technology Corporation SPECIFICATION FOR APPROVAL
CUSTOMER
NOMINAL FREQUENCY
32.768 KHz
PRODUCT TYPE
G2 Series Cylinder Through Hole Quartz C
(10 views)
Elite Semiconductor Memory Technology
M24L28256SA - 2-Mbit (256K x 8) Pseudo Static RAM
ESMT
PSRAM
Features
•Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1
(10 views)
Etron Technology
EM566169BC - 1M x 16 Pseudo SRAM
www.DataSheet4U.com
EtronTech
Features Pad Assignment
1 2 3
EM566169BC
1M x 16 Pseudo SRAM
Rev 0.6 Apr. 2004
• Organized as 1M words by 16 bits • F
(9 views)
Elite Semiconductor Memory Technology
M24L16161DA - 16-Mbit (1M x 16) Pseudo Static RAM
ESMT
Revision History :
Revision 1.0 (Jul. 4, 2007) - Original
www.DataSheet4U.com
M24L16161DA
Elite Semiconductor Memory Technology Inc.
Publicat
(9 views)
Elite Semiconductor Memory Technology
M24L16161ZA - 16-Mbit (1M x 16) Pseudo Static RAM
ESMT
Revision History :
Revision 1.0 (Jul. 4, 2007) - Original
www.DataSheet4U.com
M24L16161ZA
Elite Semiconductor Memory Technology Inc.
Publicat
(9 views)
Linear Technology
LTC2326-18 - Pseudo-Differential Input ADC
LTC2326-18 18-Bit, 250ksps, ±10.24V True Bipolar, Pseudo-Differential Input ADC with 95dB SNR
Features
Description
nn 250ksps Throughput Rate nn ±5
(8 views)
Etron Technology
EM567168 - 2M x 16 Pseudo SRAM
EtronTech
Features
• Organized as 2M words by 16 bits • Fast Cycle Time : 55ns, 70ns • Standby Current : 100uA • Deep power-down Current : 10uA (Memor
(8 views)