PSE Technology Datasheet | Specifications & PDF Download

FEATURES nn 12 Independent PSE Channels nn Compliant with IEEE 802.3at Type 1 and 2 nn Chipset Provides Electrical Isolation nn Reduced BOM Cost nn El

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LTC2326-18 18-Bit, 250ksps, ±10.24V True Bipolar, Pseudo-Differential Input ADC with 95dB SNR Features Description nn 250ksps Throughput Rate nn ±5

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LTC4263-1 High Power Single PSE Controller with Internal Switch FEATURES n 30W PSE Output Power n IEEE 802®.3af Compatible n Operation from a Single

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Features nn Four Independent PSE Channels nn Compliant with IEEE 802.3at Type 1 and 2 nn Low Power Dissipation nn 0.25Ω Sense Resistance Per Channel n

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ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.3V •Typical active current: 1 mA @ f = 1

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FEATURES n 1.6Msps Throughput Rate n ±2.5LSB INL (Max) n Guaranteed 18-Bit No Missing Codes n Low Power: 18mW at 1.6Msps, 18μW at 1.6ksps n 96.5dB SNR

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PSE Technology Corporation SPECIFICATION FOR APPROVAL CUSTOMER NOMINAL FREQUENCY PRODUCT TYPE PART NUMBER CUSTOMER P/N ISSUE DATE VERSION 16.000000

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FEATURES n IEEE 802®.3af Compliant n Operation from a Single 48V Supply n Fully Autonomous Operation without Microcontroller n Internal MOSFET with Th

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ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 1 mA @ f

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ESMT PSRAM www.DataSheet4U.com M24L48512DA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55

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ESMT PSRAM www.DataSheet4U.com M24L48512SA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55

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FEATURES nn 12 Independent PSE Channels nn Compliant with IEEE 802.3at Type 1 and 2 nn Chipset Provides Electrical Isolation nn Reduced BOM Cost nn El

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ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161DA Elite Semiconductor Memory Technology Inc. Publicat

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ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161ZA Elite Semiconductor Memory Technology Inc. Publicat

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ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f

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ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 2 mA @ f

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LTC2328-18 18-Bit, 1Msps, ±10.24V True Bipolar, Pseudo-Differential Input ADC with 95dB SNR Features Description nn 1Msps Throughput Rate nn ±5LSB

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ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — T

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ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1

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ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6 V • Typical active current: 2 mA @ f

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