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Elite Semiconductor Memory Technology
M24L16161ZA - 16-Mbit (1M x 16) Pseudo Static RAM
ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161ZA Elite Semiconductor Memory Technology Inc. Publicat.
Linear Technology
LTC2327-16 - Pseudo-Differential Input ADC
LTC2327-16 16-Bit, 500ksps, ±10.24V True Bipolar, Pseudo-Differential Input ADC with 93.5dB SNR Features Description nn 500ksps Throughput Rate nn .
PSE Technology
G23270006 - Quartz Crystal
PSE Technology Corporation SPECIFICATION FOR APPROVAL CUSTOMER NOMINAL FREQUENCY 32.768 KHz PRODUCT TYPE G2 Series Cylinder Through Hole Quartz C.
Elite Semiconductor Memory Technology
M24L16161DA - 16-Mbit (1M x 16) Pseudo Static RAM
ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161DA Elite Semiconductor Memory Technology Inc. Publicat.
Elite Semiconductor Memory Technology
M24L28256SA - 2-Mbit (256K x 8) Pseudo Static RAM
ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1.
Elite Semiconductor Memory Technology
M24L48512SA - 4-Mbit (512K x 8) Pseudo Static RAM
ESMT PSRAM www.DataSheet4U.com M24L48512SA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55 .
Linear Technology
LTC2369-18 - Pseudo-Differential Unipolar SAR ADC
FEATURES n 1.6Msps Throughput Rate n ±2.5LSB INL (Max) n Guaranteed 18-Bit No Missing Codes n Low Power: 18mW at 1.6Msps, 18μW at 1.6ksps n 96.5dB SNR.
Linear Technology
LTC2328-16 - Pseudo-Differential Input ADC
LTC2328-16 16-Bit, 1Msps, ±10.24V True Bipolar, Pseudo-Differential Input ADC with 93.5dB SNR Features Description nn 1Msps Throughput Rate nn ±1.5.
Linear Technology
LTC2327-18 - Pseudo-Differential Input ADC
LTC2327-18 Features 18-Bit, 500ksps, ±10.24V True Bipolar, Pseudo-Differential Input ADC with 95dB SNR Description nn 500ksps Throughput Rate nn ±5.
Linear Technology
LTC2326-18 - Pseudo-Differential Input ADC
LTC2326-18 18-Bit, 250ksps, ±10.24V True Bipolar, Pseudo-Differential Input ADC with 95dB SNR Features Description nn 250ksps Throughput Rate nn ±5.
Linear Technology
LTC2326-16 - Pseudo-Differential Input ADC
LTC2326-16 16-Bit, 250ksps, ±10.24V True Bipolar, Pseudo-Differential Input ADC with 93.5dB SNR Features n 250ksps Throughput Rate n ±1.5LSB INL (Max.
PSE Technology
G23270013 - Quartz Crystal
PSE Technology Corporation SPECIFICATION FOR APPROVAL CUSTOMER NOMINAL FREQUENCY 32.768 KHz PRODUCT TYPE G2 Series Cylinder Through Hole Quartz C.
Etron Technology Inc.
EM566168 - 1M x 16 Pseudo SRAM
EtronTech Features • Organized as 1M words by 16 bits • Fast Cycle Time : 70ns • Standby Current : 100uA • Deep power-down Current : 10uA (Memory cell.
PSE Technology
KK3270045 - CRYSTAL CLOCK OSCILLATOR
PSE Technology Corporation SPECIFICATION FOR APPROVAL CUSTOMER NOMINAL FREQUENCY PRODUCT TYPE SPEC. NO. ( P/N ) CUSTOMER P/N ISSUE DATE VERSION APPRO.
Etron Technology
EM565168 - 512K x 16 Pseudo SRAM
EtronTech Rev 1.0 Features • Organized as 512K words by 16 bits • Fast Cycle Time : 55ns, 70ns • Standby Current : 100uA •Deep power-down Current : 10.
Etron Technology
EM567168 - 2M x 16 Pseudo SRAM
EtronTech Features • Organized as 2M words by 16 bits • Fast Cycle Time : 55ns, 70ns • Standby Current : 100uA • Deep power-down Current : 10uA (Memor.
Linear Technology
LTC4263 - Single IEEE 802.3af Compliant PSE Controller
FEATURES n IEEE 802®.3af Compliant n Operation from a Single 48V Supply n Fully Autonomous Operation without Microcontroller n Internal MOSFET with Th.
Linear Technology
LTC4263-1 - High Power Single PSE Controller
LTC4263-1 High Power Single PSE Controller with Internal Switch FEATURES n 30W PSE Output Power n IEEE 802®.3af Compatible n Operation from a Single .
Elite Semiconductor Memory Technology
M24L216128DA - 2-Mbit (128K x 16) Pseudo Static RAM
ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 1 mA @ f .
Elite Semiconductor Memory Technology
M24L216128SA - 2-Mbit (128K x 16) Pseudo Static RAM
ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — T.