RCH-109 Datasheet | Specifications & PDF Download

FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 3

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FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT April 2013 FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT Features • N

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FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS

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FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel MOSFET Features • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V • Low gate charge ( typica

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74AC109, 74ACT109 Dual JK Positive Edge-Triggered Flip-Flop March 2007 74AC109, 74ACT109 Dual JK Positive Edge-Triggered Flip-Flop Features ■ ICC re

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FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V

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FDA16N50_F109 — N-Channel UniFETTM MOSFET November 2013 FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features • RDS(on) = 380 m (Ma

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FDA20N50_F109 — N-Channel UniFETTM MOSFET FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features • RDS(on) = 230 mΩ (Max.) @ VGS = 10 V

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FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @

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FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET FCA47N60 / FCA47N60_F109 N-Channel SuperFET® MOSFET 600 V, 47 A, 70 mΩ September 2017 Feature

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J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resi

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FJV3109R FJV3109R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Res

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FJV4109R FJV4109R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Res

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DM74ALS109A Dual J-K Positive-Edge-Triggered Flip-Flop with Preset and Clear April 1984 Revised February 2000 DM74ALS109A Dual J-K Positive-Edge-Tri

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DM74LS109A Dual Positive-Edge-Triggered J-K Flip-Flop with Preset, Clear, and Complementary Outputs June 1986 Revised March 2000 DM74LS109A Dual Pos

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74F109 Dual JK Positive Edge-Triggered Flip-Flop April 1988 Revised November 1999 74F109 Dual JK Positive Edge-Triggered Flip-Flop General Descripti

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74AC109, 74ACT109 Dual JK Positive Edge-Triggered Flip-Flop March 2007 74AC109, 74ACT109 Dual JK Positive Edge-Triggered Flip-Flop Features ■ ICC re

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KSB1097 KSB1097 Low Frequency Power Amplifier • Low Speed Switchng Industrial Use • Complement to KSD1588 1 TO-220F 2.Collector 3.Emitter 1.Base

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KSB1098 KSB1098 Low Frequency Power Amplifier • Low Speed Switchng Industrial Use • Complement to KSD1589 1 TO-220F 2.Collector 3.Emitter 1.Base

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J109 / MMBFJ108 — N-Channel Switch January 2015 J109 / MMBFJ108 N-Channel Switch Features • This device is designed for digital switching applicati

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