RCH-109 Datasheet | Specifications & PDF Download

DM74ALS109A Dual J-K Positive-Edge-Triggered Flip-Flop with Preset and Clear April 1984 Revised February 2000 DM74ALS109A Dual J-K Positive-Edge-Tri

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J109 / MMBFJ108 — N-Channel Switch January 2015 J109 / MMBFJ108 N-Channel Switch Features • This device is designed for digital switching applicati

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FJV4109R FJV4109R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Res

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74AC109, 74ACT109 Dual JK Positive Edge-Triggered Flip-Flop March 2007 74AC109, 74ACT109 Dual JK Positive Edge-Triggered Flip-Flop Features ■ ICC re

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www.DataSheet4U.com FPF2108-FPF2110 IntelliMAX™ Advanced Load Management Products May 2005 FPF2108-FPF2110 IntelliMAX™ Advanced Load Management Pro

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DM74LS109A Dual Positive-Edge-Triggered J-K Flip-Flop with Preset, Clear, and Complementary Outputs June 1986 Revised March 2000 DM74LS109A Dual Pos

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FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V

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FQA9N90_F109 — N-Channel QFET® MOSFET FQA9N90_F109 N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω May 2014 Features • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Ma

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74AC109, 74ACT109 Dual JK Positive Edge-Triggered Flip-Flop March 2007 74AC109, 74ACT109 Dual JK Positive Edge-Triggered Flip-Flop Features ■ ICC re

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FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 3

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FQA9N90C_F109 — N-Channel QFET® MOSFET FQA9N90C_F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 1

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July 2014 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single

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FQA7N80C_F109 — N-Channel QFET® MOSFET FQA7N80C_F109 N-Channel QFET® MOSFET 800 V, 7 A, 1.9 Ω Features • 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS =

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74F109 Dual JK Positive Edge-Triggered Flip-Flop April 1988 Revised November 1999 74F109 Dual JK Positive Edge-Triggered Flip-Flop General Descripti

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Power Inductor< Pin Type : RCH Series> Type: RCH-109 ◆ Product Description ・10.3mm Max. φ, 9.0mm Max. Height. ・Inductance range: 10μH～1.0mH ・Rated cu

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FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @

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FQA90N15_F109 — N-Channel QFET® MOSFET FQA90N15_F109 N-Channel QFET® MOSFET 150 V, 90 A, 18 mΩ Features • RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 4

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FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET FCA47N60 / FCA47N60_F109 N-Channel SuperFET® MOSFET 600 V, 47 A, 70 mΩ September 2017 Feature

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FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS

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KSB1097 KSB1097 Low Frequency Power Amplifier • Low Speed Switchng Industrial Use • Complement to KSD1588 1 TO-220F 2.Collector 3.Emitter 1.Base

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