RCH-109 Datasheet | Specifications & PDF Download

74AC109, 74ACT109 Dual JK Positive Edge-Triggered Flip-Flop March 2007 74AC109, 74ACT109 Dual JK Positive Edge-Triggered Flip-Flop Features ■ ICC re

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J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resi

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FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 3

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DM74ALS109A Dual J-K Positive-Edge-Triggered Flip-Flop with Preset and Clear April 1984 Revised February 2000 DM74ALS109A Dual J-K Positive-Edge-Tri

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J109 / MMBFJ108 — N-Channel Switch January 2015 J109 / MMBFJ108 N-Channel Switch Features • This device is designed for digital switching applicati

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FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS

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FQA9N90C_F109 — N-Channel QFET® MOSFET FQA9N90C_F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 1

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FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @

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KSB1097 KSB1097 Low Frequency Power Amplifier • Low Speed Switchng Industrial Use • Complement to KSD1588 1 TO-220F 2.Collector 3.Emitter 1.Base

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FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel MOSFET Features • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V • Low gate charge ( typica

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FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V

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FDA16N50_F109 — N-Channel UniFETTM MOSFET November 2013 FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features • RDS(on) = 380 m (Ma

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FQA8N90C_F109 — N-Channel QFET® MOSFET FQA8N90C_F109 N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω Features • 8 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 1

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FDA20N50_F109 — N-Channel UniFETTM MOSFET FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features • RDS(on) = 230 mΩ (Max.) @ VGS = 10 V

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FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET August 2007 SuperFETTM Features • 650V @TJ = 150°

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FQA13N80_F109 — N-Channel QFET® MOSFET FQA13N80_F109 N-Channel QFET® MOSFET 800 V, 12.6 A, 750 mΩ April 2014 Description This N-Channel enhancement

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Power Inductor< Pin Type : RCH Series> Type: RCH-109 ◆ Product Description ・10.3mm Max. φ, 9.0mm Max. Height. ・Inductance range: 10μH～1.0mH ・Rated cu

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FJV3109R FJV3109R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Res

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DM74LS109A Dual Positive-Edge-Triggered J-K Flip-Flop with Preset, Clear, and Complementary Outputs June 1986 Revised March 2000 DM74LS109A Dual Pos

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KSB1098 KSB1098 Low Frequency Power Amplifier • Low Speed Switchng Industrial Use • Complement to KSD1589 1 TO-220F 2.Collector 3.Emitter 1.Base

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