RF64 Datasheet | Specifications & PDF Download

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN Features: 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.18 Ω

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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isc N-Channel MOSFET Transistor IRF640N，IIRF640N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤150mΩ ·Enhancement mode ·Fast Switching Spee

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® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640A FEATURES ·Low RDS(on) = 0.144Ω(TYP) ·Lower Input Capacitan

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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www.DataSheet4U.net MRF646 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF646 is designed for 12.5 UHF large signal applications up to 512

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IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate po

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IRF644B/IRFS644B November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF644/D NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF646 ·FEATURES ·14A, 275V ·RDS(ON) = 0.280Ω ·Single Pulse Avalanc

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES • ’Trench’ technology • Low on-state resista

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