RF64 Datasheet | Specifications & PDF Download

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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isc N-Channel MOSFET Transistor IRF640N，IIRF640N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤150mΩ ·Enhancement mode ·Fast Switching Spee

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N24RF64E RFID 64 Kb EEPROM Tag ISO 15693 RF, I2C Bus, Energy Harvesting Description The N24RF64E is a RFID/NFC tag with a 64 Kb EEPROM device, offeri

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N24RF64 Dual Interface RFID 64 Kb EEPROM Tag ISO 15693 RF and I2C Bus Compliant Description The N24RF64 is a RFID/NFC tag with a 64 Kb EEPROM device,

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IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate po

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R SEMICONDUCTOR MURF620CT THRU MURF660CT GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 200 - 600V Volts Forward Current - 6.0Amperes FEATU

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® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0

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IRF646 Data Sheet June 1999 File Number 2169.3 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field e

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SEMICONDUCTOR IRF640 Series RRooHHSS DESCRIPTION Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enh

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IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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www.DataSheet4U.net MRF646 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF646 is designed for 12.5 UHF large signal applications up to 512

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SEMICONDUCTOR IRF640 Series RRooHHSS DESCRIPTION Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enh

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com

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SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in hig

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF644/D NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6408/D NPN Silicon RF Power Transistor Designed for PCN and PCS base st

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www.vishay.com IRF644S, SiHF644S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Q

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IRF640 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge, l

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