RF64 ADVANCED COMMUNICATIONS & SENSING Ultra-Low P.
INCHANGE
IRF640NL - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.
ON Semiconductor
N24RF64E - RFID 64-Kb EEPROM
N24RF64E RFID 64 Kb EEPROM Tag ISO 15693 RF, I2C Bus, Energy Harvesting Description The N24RF64E is a RFID/NFC tag with a 64 Kb EEPROM device, offeri.
International Rectifier
IRF640N - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
International Rectifier
IRF640NS - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
Motorola
MRF6409 - RF POWER TRANSISTOR
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6409/D NPN Silicon RF Power Transistor The MRF6409 is designed for GSM .
International Rectifier
IRF640NLPBF - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
Advanced Semiconductor
MRF646 - NPN SILICON RF POWER TRANSISTOR
www.DataSheet4U.net MRF646 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF646 is designed for 12.5 UHF large signal applications up to 512 .
Vishay
IRF644N - Power MOSFET
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 V RDS(on) (Ω) VGS = 10 V Q.
nELL
IRF640 - N-Channel Power MOSFET
SEMICONDUCTOR IRF640 Series RRooHHSS DESCRIPTION Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enh.
INCHANGE
IRF640N - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRF640N，IIRF640N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤150mΩ ·Enhancement mode ·Fast Switching Spee.
Elpida Memory
HB52RF649DC-B - 512MB Unbuffered SDRAM S.O.DIMM
DATA SHEET 512MB Unbuffered SDRAM S.O.DIMM HB52RF649DC-B (64M words × 72 bits, 2 bank) HB52RD649DC-B (64M words × 72 bits, 2 bank) Description The HB.
Inchange Semiconductor
IRF645 - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF645 ·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Te.
Inchange Semiconductor
IRF646 - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF646 ·FEATURES ·14A, 275V ·RDS(ON) = 0.280Ω ·Single Pulse Avalanc.
Inchange Semiconductor
IRF643 - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D.
Inchange Semiconductor
IRF641 - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D.
Fairchild Semiconductor
IRF640B - 200V N-Channel MOSFET
IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi.
International Rectifier
IRF640L - Power MOSFET
PD -90902B IRF640S/L HEXFET® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S.
International Rectifier
IRF640NL - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
