RF64 ADVANCED COMMUNICATIONS & SENSING Ultra-Low P.
STMicroelectronics
80
IRF640 - N-Channel MOSFET
® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.
International Rectifier
40
IRF640N - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
INCHANGE
26
IRF640N - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRF640N，IIRF640N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤150mΩ ·Enhancement mode ·Fast Switching Spee.
Fairchild Semiconductor
15
IRF640B - 200V N-Channel MOSFET
IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi.
ST Microelectronics
13
IRF640T - N-CHANNEL POWER MOSFETS
www.DataSheet4U.com IRF640T N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET General features Type IRF640T ■ ■ ■ VDSS 200V RDS(on) .
International Rectifier
12
IRF640NS - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
Inchange Semiconductor
10
IRF640A - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640A FEATURES ·Low RDS(on) = 0.144Ω(TYP) ·Lower Input Capacitan.
International Rectifier
9
IRF640L - Power MOSFET
PD -90902B IRF640S/L HEXFET® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S.
WEITRON
9
IRF640 - N-Channel Enhancement Mode POWER MOSFET
N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN Features: 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.18 Ω.
Advanced Semiconductor
8
MRF646 - NPN SILICON RF POWER TRANSISTOR
www.DataSheet4U.net MRF646 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF646 is designed for 12.5 UHF large signal applications up to 512 .
Inchange Semiconductor
7
IRF641 - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D.
Fairchild Semiconductor
7
IRF644B - 250V N-Channel MOSFET
IRF644B/IRFS644B November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi.
Motorola Semiconductor
7
MRF648 - RF POWER TRANSISTOR
( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .
ON Semiconductor
7
IRF644B - N-Channel BFET MOSFET
IRF644B — N-Channel BFET MOSFET IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 mΩ Description These N-Channel enhancement mode power field effect tr.
NXP
6
IRF640 - N-channel TrenchMOS transistor
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES • ’Trench’ technology • Low on-state resista.
Fairchild Semiconductor
6
IRF640A - Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
International Rectifier
6
IRF640S - Power MOSFET
PD -90902B IRF640S/L HEXFET® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S.
ON Semiconductor
6
N24RF64E - RFID 64-Kb EEPROM
N24RF64E RFID 64 Kb EEPROM Tag ISO 15693 RF, I2C Bus, Energy Harvesting Description The N24RF64E is a RFID/NFC tag with a 64 Kb EEPROM device, offeri.
Inchange Semiconductor
5
IRF644A - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF644A ·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide T.