RF93 Datasheet | Pinout, Features, Price Comparison & PDF

VDS RDS(on) max (@VGS = 10V) ID (@TA = 25°C) -30 V 6 4.6 mΩ 6 6 -20 A * Applications • Charge and Discharge Switch for Notebook PC Batt

VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 7.2 mΩ 11.2 mΩ 34 nC -15 A PD - 95960 IRF9321PbF

VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 6.6 m: S1 S2 10.2 m: S3 G4 31 nC -16 A PD -

IRF9389PbF N-CH 30 27 6.8 6.8 P-CH -30 64 8.1 -4.6 HEXFET® Power MOSFET V m nC A S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 V DS R DS(on) max Qg (typical

IRF9383MPbF Applications l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications Features and Benefits

VDS RDS(on) max (@VGS = 10V) ID (@TA = 25°C) -30 V 6 4.6 mΩ 6 6 -20 A * Applications • Charge and Discharge Switch for Notebook PC Batt

PD - 97518 IRF9328PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 11.9 19.7 18 -12 V mΩ mΩ nC A 6 6 6 *     ' ' ' ' RDS(on

VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 6.6 m: S1 S2 10.2 m: S3 G4 31 nC -16 A PD -

PD - 97616 IRF9358PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 16.3 23.8 19 -9.2 V mΩ mΩ nC A S2 1 G 2 2 S1 3 G 1 4 D 8 D2 7 D2 6

IRF9383MPbF Applications l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications Features and Benefits

IRF9358PbF Dual P-Channel HEXFET Power MOSFET in a SO-8 package VDS RDS(on) max (@ VGS = -10V) RDS(on) max (@ VGS = -4.5V) Qg (typical) ID (@ TA = 25

VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25°C) -30 ±25 11.9 -12 V V mΩ A 6 6 6 * PD - 97521 IRF9388PbF HEXFET® Power MOSFET ' ' ' 

VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 4.6 mΩ 6.8 58 nC -20 A IRF9310PbF-1 HEXFET® Power MOSFET

IRF9388PbF VDS VGS max RDS(on) max (@ VGS = -10V) ID (@TA = 25°C) -30 V ±25 m 11.9 -12 A Applications Adaptor Input Switch for Notebook P

IRF9358PbF Dual P-Channel HEXFET Power MOSFET in a SO-8 package VDS RDS(on) max (@ VGS = -10V) RDS(on) max (@ VGS = -4.5V) Qg (typical) ID (@ TA = 25

VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 7.2 mΩ 11.2 mΩ 34 nC -15 A PD - 95960 IRF9321PbF

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Peak @Total Device Dissipation T/\ = 1

VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25°C) -30 V ±25 V S1 S2 19.4 mΩ S3 -9.2 A G4 PD - 97522A IRF9393PbF HEXFET® Power MOSFET

VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 16.3 mΩ 23.8 mΩ 19 nC -9.2 A PD - 97616 IRF9358

PD - 96332A DirectFET™ dual P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) IRF9395MPbF IRF9395MTRPbF RDS(on) Qgs2 3.2nC VDSS