RF93 Datasheet | Specifications & PDF Download

VDS RDS(on) max (@VGS = 10V) ID (@TA = 25°C) -30 V 6 4.6 mΩ 6 6 -20 A * Applications • Charge and Discharge Switch for Notebook PC Batt

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IRF9358PbF Dual P-Channel HEXFET Power MOSFET in a SO-8 package VDS RDS(on) max (@ VGS = -10V) RDS(on) max (@ VGS = -4.5V) Qg (typical) ID (@ TA = 25

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RF92/93 RF92/93 - 860 MHz to 1020 MHz Low Power Long Range Transceiver LoRa GENERAL DESCRIPTION The RF92/93 transceivers feature the LoRaTM long ran

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VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25°C) -30 ±25 17.5 -9.8 V V mΩ A PD - 97571 IRF9392PbF HEXFET® Power MOSFET 6 6 6 * ' ' '

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VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25°C) -30 ±25 11.9 -12 V V mΩ A 6 6 6 * PD - 97521 IRF9388PbF HEXFET® Power MOSFET ' ' ' 

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 6.6 m: S1 S2 10.2 m: S3 G4 31 nC -16 A PD -

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 7.2 mΩ 11.2 mΩ 34 nC -15 A PD - 95960 IRF9321PbF

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Peak @Total Device Dissipation T/\ = 1

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PD - 96312 IRF9362PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 21.0 32.0 13 -8.0 V mΩ mΩ nC A S2 1 G 2 2 S1 3 G 1 4 8 D2 7 D2 6 D1

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VDS RDS(on) max (@VGS = 10V) ID (@TA = 25°C) -30 V 6 4.6 mΩ 6 6 -20 A * Applications • Charge and Discharge Switch for Notebook PC Batt

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IRF9358PbF Dual P-Channel HEXFET Power MOSFET in a SO-8 package VDS RDS(on) max (@ VGS = -10V) RDS(on) max (@ VGS = -4.5V) Qg (typical) ID (@ TA = 25

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PD - 96311A IRF9335PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 59 110 9.1 -5.4 V mΩ mΩ nC A S S S G 1 2 3 4 8 7 6 5 D D D D RD

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 4.6 mΩ 6.8 58 nC -20 A IRF9310PbF-1 HEXFET® Power MOSFET

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 6.6 m: S1 S2 10.2 m: S3 G4 31 nC -16 A PD -

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PD - 97561 IRF9332PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 17.5 28.1 14 -9.8 V mΩ mΩ nC A 6 6 6 *     ' ' ' ' RDS(o

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PD - 97523 IRF9333PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 19.4 32.5 14 -9.2 V m m : : 6 6 6 *     ' ' ' ' RDS(

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PD - 96332A DirectFET™ dual P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) IRF9395MPbF IRF9395MTRPbF RDS(on) Qgs2 3.2nC VDSS

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IRF9383MPbF Applications l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications Features and Benefits

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 16.3 mΩ 23.8 mΩ 19 nC -9.2 A PD - 97616 IRF9358

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 7.2 mΩ 11.2 mΩ 34 nC -15 A PD - 95960 IRF9321PbF

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