RF93 Datasheet | Specifications & PDF Download

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VDS RDS(on) max (@VGS = 10V) ID (@TA = 25°C) -30 V 6 4.6 mΩ 6 6 -20 A * Applications • Charge and Discharge Switch for Notebook PC Batt

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 4.6 mΩ 6.8 58 nC -20 A IRF9310PbF-1 HEXFET® Power MOSFET

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VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25°C) -30 V ±25 V S1 S2 19.4 mΩ S3 -9.2 A G4 PD - 97522A IRF9393PbF HEXFET® Power MOSFET

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 16.3 mΩ 23.8 mΩ 19 nC -9.2 A PD - 97616 IRF9358

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IRF9358PbF Dual P-Channel HEXFET Power MOSFET in a SO-8 package VDS RDS(on) max (@ VGS = -10V) RDS(on) max (@ VGS = -4.5V) Qg (typical) ID (@ TA = 25

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 7.2 mΩ 11.2 mΩ 34 nC -15 A PD - 95960 IRF9321PbF

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IRF9383MPbF Applications l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications Features and Benefits

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VDS RDS(on) max (@VGS = 10V) ID (@TA = 25°C) -30 V 6 4.6 mΩ 6 6 -20 A * Applications • Charge and Discharge Switch for Notebook PC Batt

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IRF9388PbF VDS VGS max RDS(on) max (@ VGS = -10V) ID (@TA = 25°C) -30 V ±25 m 11.9 -12 A Applications Adaptor Input Switch for Notebook P

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IRF9358PbF Dual P-Channel HEXFET Power MOSFET in a SO-8 package VDS RDS(on) max (@ VGS = -10V) RDS(on) max (@ VGS = -4.5V) Qg (typical) ID (@ TA = 25

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PD - 97523 IRF9333PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 19.4 32.5 14 -9.2 V m m : : 6 6 6 *     ' ' ' ' RDS(

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PD - 96311A IRF9335PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 59 110 9.1 -5.4 V mΩ mΩ nC A S S S G 1 2 3 4 8 7 6 5 D D D D RD

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IRF9389PbF N-CH 30 27 6.8 6.8 P-CH -30 64 8.1 -4.6 HEXFET® Power MOSFET V m nC A S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 V DS R DS(on) max Qg (typical

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PD - 96332A DirectFET™ dual P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) IRF9395MPbF IRF9395MTRPbF RDS(on) Qgs2 3.2nC VDSS

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VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25°C) -30 ±25 11.9 -12 V V mΩ A 6 6 6 * PD - 97521 IRF9388PbF HEXFET® Power MOSFET ' ' ' 

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IRF9383MPbF Applications l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications Features and Benefits

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 6.6 m: S1 S2 10.2 m: S3 G4 31 nC -16 A PD -

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 7.2 mΩ 11.2 mΩ 34 nC -15 A PD - 95960 IRF9321PbF

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PD - 97518 IRF9328PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 11.9 19.7 18 -12 V mΩ mΩ nC A 6 6 6 *     ' ' ' ' RDS(on

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