S306 Datasheet | Specifications & PDF Download

VS3060AD 30V/60A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up

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AOZ8S306BD4-05 4-Channel Ultra-Low Capacitance TVS Diode Array General Description The AOZ8S306BD4-05 is a transient voltage suppressor array designe

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Shanghai Chipanalog Microelectronics Co., Ltd. CA-IS3062W, CA-IS3062VW Version 1.09 CA-IS3062 5kVRMS Isolated CAN Transceivers with Integrated DC-DC

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Ultra High Speed Switching Application  Small package : SC-61  Low forward voltage : VF (2) =

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® DEVICE SPECIFICATION MULTIRATE (OC-48/24/12/3/GBE/FC) SONET/SDH/ATM TRANSCEIVER w/ FEC BiCMOS LVPECL CLOCK GENERATOR MULTIRATE (OC-48/24/12/3/GBE/

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Shanghai Chipanalog Microelectronics Co., Ltd. CA-IS3062W, CA-IS3062VW Version 1.09 CA-IS3062 5kVRMS Isolated CAN Transceivers with Integrated DC-DC

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XBS306P11R-G Schottky Barrier Diode, 3A, 60V Type ETR16029-001 ■FEATURES Low Forward voltage Environmentally Friendly : EU RoHS Compliant ■PRODUCT

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® DEVICE SPECIFICATION MULTIRATE (OC-48/24/12/3/GBE/FC) SONET/SDH/ATM TRANSCEIVER w/ FEC BiCMOS LVPECL CLOCK GENERATOR MULTIRATE (OC-48/24/12/3/GBE/

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THS3061 THS3062 www.ti.com SLOS394B – JULY 2002 – REVISED NOVEMBER 2009 LOW-DISTORTION, HIGH SLEW RATE, CURRENT-FEEDBACK AMPLIFIERS Check for Samp

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WN3S3060CX Dual power Schottky diode Rev.01 - 30 August 2022 Product data sheet 1. General description Dual common cathode power Schottky diode desi

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HITFETTM BTS3060TF Smart Low-Side Power Switch Single channel, 50 mΩ Datasheet Rev. 1.0, 2014-07-21 Automotive Power HITFET - BTS3060TF Smart Low-Sid

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www.DataSheet4U.com RHOPOINT COMPONENTS LTD Holland Road, Hurst Green, Oxted, Surrey, RH8 9AX, UK Tel: Fax: Email: Web site: 01883 717988 (Outside

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VS3060AS 30V/20A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦ Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, R

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14HS SERIES 1.8° I Key Features • High Torque • Small Size • Smooth Movement I General Specifications • Bi-polar Series & Length Model Number 14HS

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XBS306S19R-G Schottky Barrier Diode, 3A, 60V Type ETR16034-001 ■FEATURES Forward Voltage Forward Current : VF=0.59V (TYP.) : IF(AV)=3A Repetitive

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WN3S3060D Power Schottky diode Rev.01 - 14 November 2022 Product data sheet 1. General description Power Schottky diode in TO252 (DPAK) surface-moun

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www.DataSheet4U.com PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev. 01 — 20 September 2006 Product data sheet 1. Product profile 1.1 Gen

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