SB52-SB56 5.0 Amp Schottky Barrier Rectifiers Feat.
Toshiba
15
2SB554 - PNP Transistor
: SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS, FEATURES • High Power Dissipation • High Breakdown Voltage : P c = 1.
SavantIC
9
2SB554 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB554 DESCRIPTION ·With TO-3 package ·Complement t.
SavantIC
8
2SB557 - Silicon PNP Power Transistors
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION ·With TO-3 package ·Complement to type 2SD427 ·High .
SavantIC
7
2SB558 - Silicon PNP Power Transistors
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB558 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATI.
SavantIC
7
2SB553 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION ·With TO-220C package ·Complemen.
Texas Instruments
7
TUSB551 - 1.8-V USB 3.0 Single Channel Re-Driver
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TUSB551 SLLSEJ1A – MARCH 2014 – REVISED MARCH 2014 TUSB551 1.
WillSEMI
6
WSB5507W - Schottky Barrier Diode
WSB5507W WSB5507W Middle Power Schottky Barrier Diode Features 0.5 A Average rectified forward current Low forward voltage, low leakage current .
WON-TOP
6
SB550 - 5.0A SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS Features Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 150A Peak Low Power .
SavantIC
6
2SB550 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB550 DESCRIPTION ·With TO-66 package ·Low collect.
SavantIC
5
2SB555 - (2SB555 / 2SB556) SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION ·With TO-3 package ·Compl.
EIC
5
SB550 - SCHOTTKY BARRIER RECTIFIER DIODES
www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SB520 - SB5B0 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 100 Volts IO : 5.0 Amp.
INCHANGE
5
2SB554 - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 150W@TC= 25℃ ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(.
INCHANGE
5
2SB558 - PNP Transistor
isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC.
SavantIC
4
B557 - 2SB557
SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB557 DESCRIPTION ·With TO-3 package ·Complement to type 2SD427 ·High po.
WillSEMI
4
WSB5508L - Schottky Barrier Diode
WSB5508L Middle Power Schottky Barrier Diode Features 1A Average rectified forward current Low forward voltage Low leakage current SOD-123 pac.
SavantIC
4
2SB551 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB551 DESCRIPTION ·With TO-66 package ·Low collect.
Vishay Siliconix
4
SB550A - Schottky Barrier Rectifier
www.DataSheet.co.kr New Product SB520A thru SB560A Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage pro.
