SC-20S Datasheet | Specifications & PDF Download

SP1520S thru SP15200S .405(10.27) .383(9.72) .133(3.39) .121(3.08) .187(4.77) .171(4.36) .125(3.20) .100(2.54) Schottky Barrier Rectifiers .600(1

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SM1520SD2 thru SM15200SD2 Schottky Barrier Rectifiers .416(10.69) .376(9.65) 3 .188(4.83) .170(4.37) .054(1.40) .044(1.14) 1 MAX0.005(1.3) .619(1

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SP820S thru SP8200S .405(10.27) .383(9.72) .133(3.39) .121(3.08) .187(4.77) .171(4.36) .125(3.20) .100(2.54) Schottky Barrier Rectifiers .600(15.

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn 20S45 * ： DC-DC * ： ， A1. K. A2. ：( Ta=25

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AD20S150 150V 20A Ultra Low VF Schottky Characteristics Summary Characteristics Values IF(AV) 20 VRRM VF @ 5A, TJ = 25℃ VF @ 10A, TJ = 25℃ TJ O

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M-TEK http://www.mag-tek.com.tw 10/100 BASE-T TRANSFORMER MODULES ) Compliant With IEEE 802.3 standards including Baseline Wander Compensation speci

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SSC620S/SSC620D Ver.0.1 Page.1 SSC620S/SSC620D Ver.0.1 Page.2 SSC620S/SSC620D Ver.0.1 Page.3 SSC620S/SSC620D Ver.0.1 a. Type Number b. Lot

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LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE z Applications Low current rectification and high speed switching z Features Extremelysmall surfac

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Document No. ETS10B-07838 1/10 SPECIFICATION Customer: MTK Item: Type: Nominal frequency: Customer’s Spec. No.: NDK Spec. No.: CRYSTAL OSCILLATOR N

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JIEJIE MICROELECTRONICS CO. , Ltd PxxxxSC Series TSS Rev.4.1 DESCRIPTION:    PxxxxSC series thyristors are a type of semiconduct component. They

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MOSFET - SiC Power, Single N-Channel NVHL020N120SC1 1200 V, 20 mW, 103 A Features • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (typ. QG(tot) = 203

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60

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Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, Bare Die NVC080N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology t

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, D2PAK-7L NVBG020N120SC1 Features • Typ. RDS(on) = 20 mW • Ultra Low G

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L NVH4L040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low

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TO-220AB NXPS20S100C Dual power Schottky diode 30 January 2013 Product data sheet 1. General description Dual common cathode power Schottky diode d

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Crystal Clock Oscillator NZ2520SD Low Phase Noise Type ■ Application ● For High-quality-audio, Smartphone, Tablet computers, Wireles module, Note

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Crystal Oscillator Model Name NT2520SB n Main Application NEW Temperature-Compensated Crystal Oscillator (TCXO) NT2520S Series (with high-precision G

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L NTBG020N120SC1 Features • Typ. RDS(on) = 20 mW • Ul

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