SC-20S Datasheet | Specifications & PDF Download

(56 views)

Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn 20S45 * ： DC-DC * ： ， A1. K. A2. ：( Ta=25

(43 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60

(35 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L NVH4L040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low

(35 views)

JIEJIE MICROELECTRONICS CO. , Ltd PxxxxSC Series TSS Rev.4.1 DESCRIPTION:    PxxxxSC series thyristors are a type of semiconduct component. They

(34 views)

AD20S150 150V 20A Ultra Low VF Schottky Characteristics Summary Characteristics Values IF(AV) 20 VRRM VF @ 5A, TJ = 25℃ VF @ 10A, TJ = 25℃ TJ O

(34 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L NTBG020N120SC1 Features • Typ. RDS(on) = 20 mW • Ul

(34 views)

Document No. ETS10B-07838 1/10 SPECIFICATION Customer: MTK Item: Type: Nominal frequency: Customer’s Spec. No.: NDK Spec. No.: CRYSTAL OSCILLATOR N

(33 views)

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200 V, M1, Bare Die NVC160N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology

(33 views)

Crystal Clock Oscillator NZ2520SF ■ Application ● For Portable equipment (ex. Mobile Phone, Digital Media Player, PND, Notebook PC, etc) Ultralow Po

(30 views)

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, Bare Die NVC080N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology t

(30 views)

PROTECTION THYRISTORS P0080~P3500SA_B_C Protection Thyristors Features UL497B approved (UL file number E331293) • Fails short circuit when surged i

(29 views)

TO-220AB NXPS20S100C Dual power Schottky diode 30 January 2013 Product data sheet 1. General description Dual common cathode power Schottky diode d

(29 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, D2PAK-7L NVBG040N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID

(29 views)

Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, Die NTC020N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technol

(29 views)

DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21

(28 views)

(28 views)

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, D2PAK-7L NVBG020N120SC1 Features • Typ. RDS(on) = 20 mW • Ultra Low G

(28 views)

Pxxx0SxL SIDACtor® Series DO-214AA Agency Agency Approvals Agency File Number E133083 Schematic Symbol SIDACtor® Protection Thyristors Datasheet R

(27 views)

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L NVHL080N120SC1 Features • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (typ. QG(tot) =

(27 views)