SEMiPOWER Datasheet | Specifications & PDF Download

SAMWIN SW30CPF06 DIODE Features ■ Ultrafast recovery time ■ Low forward voltage drop ■ 150 °C operating junction temperature ■ Low leakage current

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SAMWIN SW630A N-channel TO-220/D-PAK MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.4 Ω)@VGS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capa

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Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1.2A FEATURES ▪For surface mounted applications ▪Low

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Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1.2A FEATURES ▪For surface mounted applications ▪Low

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Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1.2A FEATURES ▪For surface mounted applications ▪Low

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Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1.2A FEATURES ▪For surface mounted applications ▪Low

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Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond

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SAMWIN SW6N60 N-channel MOSFET Features TO-220F TO-251 TO-252 ■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typical 29nC) ■ Imp

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SAMWIN SW6N65 N-channel MOSFET Features TO-220F TO-251 TO-252 ■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improve

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SW601Q Features Low RDS(ON) (Typ 540Ω)@VGS=0V,ID=3mA  High Switching Speed Application:LED,Charger N-channel Depletion mode SOT23 MOSFET SOT23 3

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SAMWIN SW60N06T N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max8mΩ)@VGS=10V ■ Gate Charge (Typical 77nC) ■ Improved dv/d

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SAMWIN SW13N50 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.48Ω)@VGS=10V ■ Gate Charge (Typ 32nC) ■ Improved dv/dt Capability ■ 100

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SAMWIN SW150N08A N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 5.1m Ω)@VGS=10V ■ Gate Charge (Typ 143nC) ■ Improved dv

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Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A FEATURES • Metal silicon junction, majority carrier cond

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Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A FEATURES • Metal silicon junction, majority carrier cond

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Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1.2A FEATURES ▪For surface mounted applications ▪Low

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Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1.2A FEATURES ▪For surface mounted applications ▪Low

(4 views)

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond

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Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond

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Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 3 A FEATURES • For surface mounted applications • Low profile

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