.
SEMIPOWER
DS320W - Surface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A FEATURES • Metal silicon junction, majority carrier cond.
SEMIPOWER
SS315F - Surface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond.
SEMIPOWER
SS215F - Surface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2.0A Features • Metal silicon junction, majority carrier cond.
SEMIPOWER
SS212F - Surface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2.0A Features • Metal silicon junction, majority carrier cond.
SEMiPOWER
SW2602 - Primary side switching power supply controller
www.irantk.ir SW2601/SW2602 MOSFET SW2602 PWM ，AC/DC 。，TL431, 。 ，CSRs ； ,。, 。，PFM , ，PWM。 SW2602 ，，VDD ， VDD 。，SW2602 EMI ，SW2602 。 AC ，5%，5% ，.
SEMIPOWER
SW7N60D - N-Channel MOSFET
SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 High ruggedness Low RDS(ON) (Typ .
SEMIPOWER
SW7N60R - MOSFET
SAMWIN SW7N60R N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max1.25Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/.
SEMIPOWER
SW10N65K - N-Channel MOSFET
SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220 TO-220F TO-251N TO-252 TO-262 TO-220SF BVD.
SEMIPOWER
SW2N70 - MOSFET
SAMWIN SW2N70 Features ■ High ruggedness ■ RDS(ON) (Max 7 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO.
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SW30CPF06 - Diode
SAMWIN SW30CPF06 DIODE Features ■ Ultrafast recovery time ■ Low forward voltage drop ■ 150 °C operating junction temperature ■ Low leakage current .
SEMIPOWER
SW100N10B - MOSFET
SAMWIN SW100N10B N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved d.
SEMIPOWER
SW210N75 - MOSFET
SAMWIN SW210N75 N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max4.2mΩ)@VGS=10V ■ Gate Charge (Typical 268nC) ■ Improved d.
SEMIPOWER
SW120N04M - MOSFET
SAMWIN SW120N04M N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max5mΩ)@VGS=10V ■ Gate Charge (Typical 57nC) ■ Improved dv/.
SEMiPOWER
SW2604 - Built-in high-voltage transistor Current Mode PWM Controllers
SW2604 PWM ： SW2604 、、， ；（85—264V）， 8—12W。 ， DVD 、、、LCD 。 ： ；， 10 、，， ，， 、、 ， 0.3W ： DVD、DVB ： 1 6 Free Datasheet http://www.datashe.
SEMIPOWER
MB310F - 3A SURFACE MOUNT SCHOTTKY BRIDGE
3A SURFACE MOUNT SCHOTTKY BRIDGE FEATURES: Glass Passivated Chip Juntion Reverse Voltage - 40 to 200 V Forward Current - 3 A High Surge Current Capabi.
SEMIPOWER
SS34AF - Surface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond.
SEMIPOWER
SS32F - Surface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond.
SEMIPOWER
SS310F - Surface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond.
SEMIPOWER
SS210F - Surface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2.0A Features • Metal silicon junction, majority carrier cond.
SEMIPOWER
SS24F - Surface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2.0A Features • Metal silicon junction, majority carrier cond.