SF36_GOOD Datasheet | Specifications & PDF Download

SF31 THRU SF36 GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes Features High reliability Low le

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SSF3612 30V N-Channel MOSFET DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is

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SSF3637S 30V P-Channel MOSFET DESCRIPTION The SSF3637S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device

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SSF3637 30V Dual P-Channel MOSFET DESCRIPTION The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been

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Main Product Characteristics: VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A Features and Benefits:  Advanced trench MOSFET process technology  Speci

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Main Product Characteristics VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A Features and Benefits SOP-8  Advanced trench MOSFET process technology 

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SSF3605S 30V P-Channel MOSFET DESCRIPTION The SSF3605S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device

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DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V

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SF31G THRU SF38G GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts DO-201AD DO-15 Forward Current - 3.0 Ampere FEATURES Low for

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DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load sw

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SSF3639C 30V Complementary MOSFET DESCRIPTION The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. T

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Main Product Characteristics VDSS 25 V RDS(on) 6.8 mΩ(typ.) ID 18A SOP-8 Features and Benefits  Advanced MOSFET process technology  Special de

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DESCRIPTION The SSF3606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load sw

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SSF3617 30V P-Channel MOSFET DESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is

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SSF3626 30V Dual N-Channel MOSFET DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This devi

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SSF3624 30V Dual N-Channel MOSFET DESCRIPTION The SSF3624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This devi

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DESCRIPTION The SSF3616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load sw

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SSF3641 30V Dual P-Channel MOSFET DESCRIPTION The SSF3641 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This devi

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DESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load sw

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SSF3620 30V Dual N-Channel MOSFET DESCRIPTION The SSF3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This devi

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