www.DataSheet4U.com SHA , SHB , SHC & PS1260 SMD .
HAOHAI
A2SHB - N-Channel MOSFET
3.7A, 20V N N N-Channel Enhancement Mode Field Effect Transistor SMD Features ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design fo.
Bruckewell
A1SHB - P-Channel Enhancement Mode Power MOSFET
MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char.
H&M Semiconductor
A1SHB - P-Channel Trench Power MOSFET
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge.A2SHB - N-Channel MOSFET
Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description The LPM2302 is N-channel logi.A5SHB - P-Channel Enhancement Mode Power MOSFET
WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg.A2SHB - SOT-23 FET
SOT-23 (SOT-23 Field Effect Transistors) GMS2302AL N-Channel Enhancement-Mode MOS FETs N MOS ■MAXIMUM RATINGS Characteristic Symbol Drain-So.
OMRON
A22 - Pushbutton Switch
Pushbutton Switch Install in 22-dia. or 25-dia. Panel Cutout Easy mounting and removal of Switch Unit. Increase wiring efficiency with three-row mount.
Tyco
TPA11CGPC - TP Series Pushbutton Switches
TP Series Pushbutton Switches, Tiny, Part Number Matrix MATERIAL SPECIFICATIONS: Contacts Gold - gold plate, si.
Tyco
TPA11CGRA - TP Series Pushbutton Switches
TP Series Pushbutton Switches, Tiny, Part Number Matrix MATERIAL SPECIFICATIONS: Contacts Gold - gold plate, si.
Tyco
TPA11FGRA - TP Series Pushbutton Switches
TP Series Pushbutton Switches, Tiny, Part Number Matrix MATERIAL SPECIFICATIONS: Contacts Gold - gold plate, si.37FMA1-AAP1N - PIEZO Pushbutton Switches
Sealed Keypads Keyboards and Keypads SERIES 37F PIEZO Pushbutton Switches FEATURES • Fully Sealed • Virtually Indestructible • Vandal Resistant • In.
Kexin
A1SHB - P-Channel MOSFET
SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5.
Maxim Integrated
MAX16150 - nanoPower Pushbutton On/Off Controller
Click here for production status of specific part numbers. MAX16150 nanoPower Pushbutton On/Off Controller and Battery Freshness Seal General Descri.
Sanyo Semicon Device
LE28DW1621T - 16 Megabit FlashBank Memory
16 Megabit FlashBank Memory LE28DW1621T-80T (Draft3) FEATURES: 1 Sp ec ifi ca tio ns • • • • • • • • • • Single 3.0-Volt Read and Write Operations .
YANGJING
A1SHB - P-Channel MOSFET
SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLIC.A2SHB - N-Channel MOSFET
SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 /SOT-23 Plastic-Encapsulate MOSFETS SLS2302(N-Channel Enhancement mode Field Effect Transistor) /MARKIN.
E-SWITCH
TL2205 - ILLUMINATED PUSHBUTTON SWITCH
SERIES TL2205 SWITCHES ILLUMINATED PUSHBUTTON SWITCH MECHANICAL SPECIFICATIONS Mechanical Life: Force: Travel: 10,000 cycles 250 +/- 100 .ILP3FCD - Sealed pushbutton switches
www.DataSheet.co.kr IL series Sealed pushbutton switches for thick panels - long bushing Ø 12 mm - momentary Distinctive features and specifications .KFB3ANA1BBB - Sealed Pushbutton
Sealed Pushbutton Single and Double Pole KF Series Features Snap-in mounting RoHS compliant 100,000 cycles mechanical life IP65 Switches .
Sanyo
LE28DW8102T - 8 Megabit FlashBank Memory
8 Megabit FlashBank Memory LE28DW8102T FEATURES: • Single 3.0-Volt Read and Write Operations 1 Sp ec ifi ca tio ns • • • • • • • 1 • Separate Memor.
