SHB Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description The LPM2302 is N-channel logi

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WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is

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SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 /SOT-23 Plastic-Encapsulate MOSFETS SLS2302(N-Channel Enhancement mode Field Effect Transistor) /MARKIN

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SOT-23 (SOT-23 Field Effect Transistors) GMS2302AL N-Channel Enhancement-Mode MOS FETs N MOS ■MAXIMUM RATINGS Characteristic Symbol Drain-So

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SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5

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VS2301BC-A -20V/-3A P-Channel Advanced Power MOSFET Features  P-Channel  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant;

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SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLIC

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Lighted Pushbutton Switch Control Units Assembled Lighted Pushbutton Switches and Separate-Unit Type 16-mm Cylindrical Series s Lighted and non-lighte

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16 Megabit FlashBank Memory LE28DW1621T-80T (Draft3) FEATURES: 1 Sp ec ifi ca tio ns • • • • • • • • • • Single 3.0-Volt Read and Write Operations

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Click here for production status of specific part numbers. MAX16150 nanoPower Pushbutton On/Off Controller and Battery Freshness Seal General Descri

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Lighted Pushbutton Switch Control Units Assembled Lighted Pushbutton Switches and Separate-Unit Type 16-mm Cylindrical Series s Lighted and non-lighte

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16 Megabit FlashBank Memory LE28DW1621T-80T (Draft3) FEATURES: 1 Sp ec ifi ca tio ns • • • • • • • • • • Single 3.0-Volt Read and Write Operations

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Pushbutton Switch Install in 22-dia. or 25-dia. Panel Cutout Easy mounting and removal of Switch Unit. Increase wiring efficiency with three-row mount

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Multilayer Chip Ferrite Beads ——SHB-2012 Features 1. Effective in suppressing noise at high frequencies. 2. Suited for preventing the abnormal oscilla

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TP Series Pushbutton Switches, Tiny, Part Number Matrix MATERIAL SPECIFICATIONS: Contacts Gold - gold plate, si

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