SHB Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

(3331 views)

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

(2362 views)

HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

(336 views)

Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description The LPM2302 is N-channel logi

(152 views)

WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg

(108 views)

WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is

(106 views)

SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 /SOT-23 Plastic-Encapsulate MOSFETS SLS2302(N-Channel Enhancement mode Field Effect Transistor) /MARKIN

(96 views)

VS2301BC-A -20V/-3A P-Channel Advanced Power MOSFET Features  P-Channel  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant;

(92 views)

SOT-23 (SOT-23 Field Effect Transistors) GMS2302AL N-Channel Enhancement-Mode MOS FETs N MOS ■MAXIMUM RATINGS Characteristic Symbol Drain-So

(88 views)

SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLIC

(37 views)

SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5

(35 views)

FEATURES n Automatic Turn-On Via Voltage Monitor Input n Wide Input Supply Range: 1.5V to 36V n Low Supply Current: 1.2μA n ±25kV ESD HBM on PB Input

(31 views)

Click here for production status of specific part numbers. MAX16122–MAX16125 Dual Pushbutton Controllers in Tiny 6-Bump WLP Package General Descript

(31 views)

MSWSHB-020-30 PIN DIODE SHUNT SWITCH ELEMENT (2012) Molden Plastic DFN Description A broadband, high linearity, medium power shunt switch element in

(30 views)

PCE-5125 Preliminary Intel Core i7/i5/i3/Xeon SHB with DDR3/ Dual GbEs/SATA RAID/Dual Display Features  LGA 1156 Intel® Core™ i7/i5/i3/Pentium/Xeon

(29 views)

BY8290 、： BY8290， （ASIC）， ，。 y y y y y 1/12 BY8290、 ，Switec X12.017 。 1 、： 1，15 12 3，14，17，28 2，13，16，27 26 7，8，21，22 6，9，20，23 4，11，18，25

(29 views)

MSWSHB-020-30 PIN Diode Shunt Switch Element Features  Supports up to 40 W Power  Low Insertion Loss: 0.2 dB to 2.7 GHz 0.4 dB to 10.0 GHz  High Is

(28 views)

Click here for production status of specific part numbers. MAX16122–MAX16125 Dual Pushbutton Controllers in Tiny 6-Bump WLP Package General Descript

(28 views)

Lighted Pushbutton Switch Control Units Assembled Lighted Pushbutton Switches and Separate-Unit Type 16-mm Cylindrical Series s Lighted and non-lighte

(27 views)

NJU7392 2ch Pushbutton Interface EVR with eala Stereo Expander ■ GENERAL DESCRIPTION The NJU7392 is a 2-channel electronic volume which include a Volu

(27 views)