SI1 Datasheet | Pinout, Features, Price Comparison & PDF

NSI1042C Isolated CAN Transceiver Datasheet (EN) 1.4 Product Overview The NSI1042C is an isolated CAN transceiver which fully compatible with the ISO

NSi1300 High Reliability Reinforced Isolated Amplifier Datasheet (EN) 1.4 Product Overview NSI1300 is a high-performance isolated amplifier with outp

NSi1311 High Reliability Reinforced Isolated Amplifier Datasheet (EN) 1.5 Product Overview NSI1311 is a high-performance isolated amplifier with outp

NSi1306 High Reliability Reinforced Isolated Sigma-Delta Modulator Datasheet (EN) 1.6 Product Overview The NSI1306 is a high performance Σ-Δ modulato

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Si 11 4 1 / 4 2 /43 P R O X I M I T Y /A M BI E N T L I G H T S E N S O R I C WI T H I 2 C I N T E R F A C E Features Pin Assignments  QuickSense™ i

NSI1042/NSI1052 Isolated CAN Transceiver Datasheet (EN) 1.3 Product Overview The NSI1042 is an isolated CAN transceiver which fully compatible with t

LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G S-LSI1012XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD

Dual N-Channel 20 V (D-S) MOSFET Si1024X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.70 at VGS = 4.5 V 20 0.85 at VGS = 2.5 V 1.25

NSi1050 Isolated CAN Transceiver Product Overview The NSi1050 is a isolated CAN transceiver which fully compatible with the ISO11898-2 standard. The

LM1875 www.ti.com SNAS524A – MAY 2004 – REVISED MAY 2004 LM1875 20W Audio Power Amplifier Check for Samples: LM1875 FEATURES 1 •2 Up to 30 Watts O

DataSheet.in ispLSI and pLSI 1032E ® ® High-Density Programmable Logic Features • HIGH DENSITY PROGRAMMABLE LOGIC — 6000 PLD Gates — 64 I/O Pins, Ei

NSi1300-Q1 High Reliability Reinforced Isolated Amplifier Datasheet (EN) 1.1 Product Overview NSI1300-Q1 is a high-performance isolated amplifier wit

NSi1200 High Reliability Reinforced Isolated Amplifier Datasheet (EN) 1.3 Product Overview NSI1200 is a high-performance isolated amplifier with outp

0 The NSI1000 is a CMOS image sensor for machine vision applications. It is designed for high volume markets such as robotics LiDAR, industry 4.0, au

Dual N-Channel 30 V (D-S) MOSFET Si1900DL Vishay Siliconix # PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.480 at VGS = 10 V 0.700 at VGS = 4.5 V ID

SNAP–IN MOUNT ALUMINUM ELECTROLYTIC SI SERIES SUBMINIATURE (SI: Snap–in) The SI Snap–in series subminiature aluminum electrolytic capacitors are espec

SMD Power Inductors - SESI 18 W • Low profile and light • Highly efficient and reliable • Materials meet UL 94-V0 rating • Frequency range up to 1 MHz

LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Si