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NSi1200 High Reliability Reinforced Isolated Amplifier Datasheet (EN) 1.3 Product Overview NSI1200 is a high-performance isolated amplifier with outp

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IGBT Module Preliminary Data Sheet OP 9 L9 E2 X13 GH 10 NTC K10 X15 X16 VX 18 PSI 100/06* PSIG 100/06 PSI 100/06* PSIS 100/06* PSSI 100/06*

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Si1403DL www.DataSheet4U.com New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.180 @ VGS = –4.5 V –2

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LIGITEK ELECTRONICS CO.,LTD. www.DataSheet4U.com Property of Ligitek Only TOWER TYPE LED LAMPS LSI11240 DATA SHEET DOC. NO REV. DATE : : QW0905-

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DataSheet.in ispLSI and pLSI 1032E ® ® High-Density Programmable Logic Features • HIGH DENSITY PROGRAMMABLE LOGIC — 6000 PLD Gates — 64 I/O Pins, Ei

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LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Si

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LESHAN RADIO COMPANY, LTD. P-Channel 1.8-V (G-S) MOSFET LSI1013LT1G S-LSI1013LT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD

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High Current Power Inductor CSI1580 Series Outline: Flat wire winding, achieve a low D.C. Resistance. Magnetic shielded structure: excellent resistanc

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AiT Semiconductor Inc. WSI www.ait-ic.com WIRE WOUND SMD INDUCTOR ●FEATURE 1. High performance (Isat) realized by metal dust core. 2. Low loss rea

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Si1405DL www.DataSheet4U.com New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.125 @ VGS = –4.5 V –8

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DIPSCDCNEO#VNI0T5CIAEN-1UH0EADS OutputPBEERoutingREPoolN Output Routing Pool ispLSI® 1048C/883 In-System Programmable High Density PLD Features • HI

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USE ispLSI 1032EA FOR NEW LeadFree Package Options Available ispLSI ® 1032E In-System Programmable High Density PLD Features • HIGH DENSITY PROGRA

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New Product Si1051X Vishay Siliconix P-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.122 at VGS = - 4.5 V -8 0.141 at VGS = - 2.5

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www.DataSheet.co.kr New Product Si1401EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.034 at VGS = - 4.5 V -

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www.DataSheet.co.kr SPICE Device Model Si1403CDL Vishay Siliconix P-Channel 20 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typ

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Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operati

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P-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD

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Si1000/1/2/3/4/5 Ultra Low Power, 64/32 kB, 10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operatio

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AiT Semiconductor Inc. WSI www.ait-ic.com WIRE WOUND SMD INDUCTOR ●FEATURE 1. High performance (Isat) realized by metal dust core. 2. Low loss rea

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