| No |
Part Number |
Description |
Manufacture |
PDF |
| 216 |
SI1000 |
(SI Series) SNAP-IN MOUNT ALUMINUM ELECTROLYTIC
SNAP–IN MOUNT ALUMINUM ELECTROLYTIC
SI SERIES
SUBMINIATURE (SI: Snap–in)
The SI Snap–in series subminiature aluminum electrolytic capacitors are especially suitable for applications requiring hi |
NTE Electronics
|
|
| 215 |
SI1002R |
N-Channel 30V (D-S) MOSFET
www.vishay.com
N-Channel 30 V (D-S) MOSFET
Si1002R
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) MAX. 0.560 at VGS = 4.5 V 0.620 at VGS = 2.5 V 0.700 at VGS = 1.8 V 1.100 at VGS = 1.5 V |
Vishay
|
|
| 214 |
SI1010 |
(SI1010 - SI1015) Ultra Low Power ADC
Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; reta |
Silicon Laboratories
|
|
| 213 |
SI1011 |
(SI1010 - SI1015) Ultra Low Power ADC
Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; reta |
Silicon Laboratories
|
|
| 212 |
SI1012 |
(SI1010 - SI1015) Ultra Low Power ADC
Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; reta |
Silicon Laboratories
|
|
| 211 |
SI1012CR |
N-Channel 20 V (D-S) MOSFET
www.DataSheet.co.kr
Si1012CR
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V ID (A) 0.5 0.2 0.2 |
Vishay Siliconix
|
|
| 210 |
SI1012R |
N-Channel 1.8-V (G-S) MOSFET
Si1012R/X
New Product
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V
ID (mA)
600 500 350
FEATURES
D D |
Vishay Siliconix
|
|
| 209 |
SI1012X |
N-Channel 1.8-V (G-S) MOSFET
Si1012R/X
New Product
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V
ID (mA)
600 500 350
FEATURES
D D |
Vishay Siliconix
|
|
| 208 |
SI1013 |
(SI1010 - SI1015) Ultra Low Power ADC
Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; reta |
Silicon Laboratories
|
|
| 207 |
SI1013CX |
MOSFET
www.vishay.com
Si1013CX
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.760 at VGS = -4.5 V
-20 1.040 at VGS = -2.5 V
1.500 at VGS = -1.8 V
ID (A) -0.45 -0 |
Vishay
|
|
| 206 |
SI1013R |
P-Channel 1.8-V (G-S) MOSFET
Si1013R/X
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
1.2 @ VGS = –4.5 V –20 1.6 @ VGS = –2.5 V 2.7 @ VGS = –1.8 V
ID (mA)
–350 –300 |
Vishay Siliconix
|
|
| 205 |
SI1013X |
P-Channel 1.8-V (G-S) MOSFET
Si1013R/X
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
1.2 @ VGS = –4.5 V –20 1.6 @ VGS = –2.5 V 2.7 @ VGS = –1.8 V
ID (mA)
–350 –300 |
Vishay Siliconix
|
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