Si2307 P-Channel Enhancement Mode Field Effect Tr.
PUOLOP
SI2307 - -30V P-Channel Enhancement Mode MOSFET
SI2307 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Ω Features Advance.
Advanced Semiconductor
ASI2307 - NPN SILICON RF POWER TRANSISTOR
ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz.
SiPU
Si2307 - P-Channel Enhancement Mode Field Effect Transistor
Si2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req.
MCC
SI2307 - P-Channel Enhancement Mode Field Effect Transistor
MCC R Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .
Vishay
Si2307CDS - P-Channel 30-V (D-S) MOSFET
New Product P-Channel 30-V (D-S) MOSFET Si2307CDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.088 at VGS = - 10 V 0.138 at VGS = .
Vishay Siliconix
SI2307DS - P-Channel MOSFET
Si2307DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.080 @ VGS = –10 V 0.140 @ VGS = –4.5 V ID (A) –3 –2.