SIL-20 Datasheet | Specifications & PDF Download

FJNS4202R FJNS4202R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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PRELIMINARY VERSION nly R820T O High Performance Low Power Advanced Digital TV Silicon Tuner Datasheet orSuite 808, Building 53, No.195, Sec.4, Chung

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XT2052 1A Compatible With the USB Interface, Linear Battery Management Chip ■ General Description The XT2052 is a constant- current / constant- volt

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isc Silicon NPN Power Transistor KTC2020D DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching S

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC2073 DESCRIPTION ·With TO-220 package ·Complement to type 2SA940 APPL

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig

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Silicon FS Trench IGBT CRG40T120AK5HDZ General Description： Using owner proprietary trench design and advanced Field Stop (FS) technology, offering s

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NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application

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RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Inte

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www.vishay.com VS-1N1 A, VS-1N36..A Series Vishay Semiconductors Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A DO-4 (DO-203AA) PRI

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 KBP200 - KBP210 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 2.0 Amperes

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UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Recommended for 100W High Fideli

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1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Unit: mm l Average Power Di

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RL201 THRU RL207 GENERAL PURPOSE SILICON RECTIFIER REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 2.0 Amperes FEATURES The plastic package carries

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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DATA SHEET P4SMAJ5.0 SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.0~188 Volts POWER 400 Watt FEATURES z OPTIMIZED FOR LAN PROTECTION A

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RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit and Driver Cir

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