SK29 Datasheet | Specifications & PDF Download

2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.042Ω typ. • 4V gate drive device

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2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2952 Chopper Regulator Applications Unit: mm l Low drain−source ON r

Rating: 1 ★ (11 votes)

2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2952 Chopper Regulator Applications Unit: mm l Low drain−source ON r

Rating: 1 ★ (8 votes)

2SK2967 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2967 DC−DC Converter, Relay Drive and Motor Drive Applications z Low d

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isc N-Channel MOSFET Transistor 2SK2960 FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Re

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2SK2937 Silicon N Channel MOS FET High Speed Power Switching ADE-208-560C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.026 Ω typ. •

Rating: 1 ★ (7 votes)

2SK2961 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2961 Relay Drive, Motor Drive and DC−DC Con

Rating: 1 ★ (7 votes)

2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2917 Chopper Regulator, DC−DC Converter and Motor Drive Applications z

Rating: 1 ★ (7 votes)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2981 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effec

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2SK2901-01L,S N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

Rating: 1 ★ (6 votes)

2SK2907-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V

Rating: 1 ★ (6 votes)

2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.040Ω ty

Rating: 1 ★ (6 votes)

2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2005 Features • Low on-resista

Rating: 1 ★ (6 votes)

2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) 2SK2985 DC−DC Converter, Relay Drive and Motor Drive Applications Unit:

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> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MO

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2SK2972-VB 2SK2972-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (n

Rating: 1 ★ (6 votes)

2SK2901-01L,S N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

Rating: 1 ★ (5 votes)

2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

Rating: 1 ★ (5 votes)

2SK2903-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

Rating: 1 ★ (5 votes)

2SK2904-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FU

Rating: 1 ★ (5 votes)