SM12/SM15 Low Capacitance Dual Line ESD Protectio.
Toshiba Semiconductor
M12JZ47 - SM12JZ47
www.DataSheet4U.com SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12GZ47,SM12JZ47,SM12GZ47A,SM.
SCHOTT
SM125A0 - SEFUSE Thermal Links
12 Standard Ratings SM/A series Dimension (Unit: mm) ø0.6 ±0.05 ø2.5 ±0.3 ø0.6 ±0.05 Marking Rated Functioning Temperature Rated Current CCC Mark .
VSEEI
VSM120N04-T2 - These N-Channel enhancement mode power field effect transistors
VSM120N04-SS Shenzhen VSEEI Semiconductor Co., Ltd Description These N-Channel enhancement mode power field effect transistors are using trench DMOS .
VSEEI
VSM120N04-T1 - These N-Channel enhancement mode power field effect transistors
VSM120N04-SS Shenzhen VSEEI Semiconductor Co., Ltd Description These N-Channel enhancement mode power field effect transistors are using trench DMOS .
SCHOTT
SM125B0 - SEFUSE Thermal Links
12 Standard Ratings SM/A series Dimension (Unit: mm) ø0.6 ±0.05 ø2.5 ±0.3 ø0.6 ±0.05 Marking Rated Functioning Temperature Rated Current CCC Mark .
Toshiba Semiconductor
SM12GZ47A - (SM12xxZ47x) AC POWER CONTROL APPLICATIONS
SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A AC POWE.
Toshiba Semiconductor
SM12J45 - TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPL.
Toshiba
USM12J48A - BI-DIRECTIONAL TRIODE THYRISTOR
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G48,USM12G48,SM12J48,USM12J48 SM12.
Diodes
SM12 - DUAL COMMON ANODE TVS DIODE
ADVANCE INFORMATION YM Features • 300 Watts Peak Pulse Power (tp = 8x20μs) • IEC 61000-4-2 (ESD): Air – 15kV, Contact – 8kV • Typically Used at Compu.
STATE MICROELECTRONICS
SM12510 - VFD drive control dedicated circuit
VFD SM12510 --------- : 6D ADD: 6D,Tianxiang Building,Tian’an Industrial District,Shennan BLVD,Shenzhen,P.R.China Tel 0755-3562162 Fax:0755-35.
Sinopower
SM1202NSAS - N-Channel MOSFET
SM1202NSAS Features · 30V/0.83A , RDS(ON)=0.7W(max.) @ VGS=4.5V RDS(ON)=1W(max.) @ VGS=2.5V RDS(ON)=1.6W(max.) @ VGS=1.8V RDS(ON)=2W(max.) @ VGS=1.5V .
Dynex
DIM1600FSM12-A000 - Single Switch IGBT Module
Replaces DS5533-3.1 DIM1600FSM12-A000 Single Switch IGBT Module DS5533-4 October 2010 (LN27611) FEATURES 10µs Short Circuit Withstand High Therm.
Toshiba Semiconductor
SM12G45 - TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPL.
CHENMKO
SSM12PT - SCHOTTKY BARRIER RECTIFIER
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 - 60 Volts CURRENT 1.0 Ampere SSM12PT THRU SSM16PT FEATURES * P.
CHENMKO
SSM12LPT - SCHOTTKY BARRIER RECTIFIER
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 - 40 Volts CURRENT 1.0 Ampere SSM12LPT THRU SSM14LPT FEATURES *.
Toshiba Semiconductor
SM12GZ47 - (SM12xxZ47x) AC POWER CONTROL APPLICATIONS
SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A AC POWE.
Murata Electronics
NFZ18SM121SN10 - ChipEMIFIL
Noise Suppression Products/EMI Suppression Filters > EMIFILr (Inductor type) > ChipEMIFILr Data Sheet 1 EMIFILr (Inductor type) ChipEMIFILr NFZ18SM.
Toshiba
SM12G48 - BI-DIRECTIONAL TRIODE THYRISTOR
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G48,USM12G48,SM12J48,USM12J48 SM12.
Toshiba
SM12J48 - BI-DIRECTIONAL TRIODE THYRISTOR
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G48,USM12G48,SM12J48,USM12J48 SM12.
