SM12 Datasheet | Specifications & PDF Download

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PROTECTION PRODUCTS Description The SM series of transient voltage suppressors (TVS) are designed to protect components which are connected to data an

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www.DataSheet4U.com SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12GZ47,SM12JZ47,SM12GZ47A,SM

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DIM1200NSM12-A000 Single Switch IGBT Module DS6344-1 November 2020 (LN40368) FEATURES • 10µs Short Circuit Withstand • High Thermal Cycling Capabilit

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GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch

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SM1200NSAS ® N-Channel Enhancement Mode MOSFET Features Pin Description · 60V/0.2A , RDS(ON)=2.2W(max.) @ VGS=10V RDS(ON)=2.6W(max.) @ VGS=4.5V ·

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Replaces DS5533-3.1 DIM1600FSM12-A000 Single Switch IGBT Module DS5533-4 October 2010 (LN27611) FEATURES  10µs Short Circuit Withstand  High Therm

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere SM120 THRU SM160 FEATURES * Ideal for surface mounted appli

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SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPL

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ASM1232LP, ASM1232LPS 5 V mP Power Supply Monitor and Reset Circuit Description The ASM1232LP/LPS is a fully integrated microprocessor Supervisor. It

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SM120AF thru SM1100AF Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 1.0A FEATURES * Plastic package has Underwriters Laborato

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SM120A thru SM1100A FEATURES Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 1.0A * Plastic package has Underwriters Laborato

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Elektronische Bauelemente SM1200A VOLTAGE 200 V 1.0 A Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f

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Elektronische Bauelemente SM120AF~SM1200AF 20 V ~ 200 V 1.0 Amp Surface Mount Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” sp

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SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SM6.8 THRU SM200CA Breakdown Voltage Peak Pulse Power 6.8 to 200 Volts 400 Watts FEATURES • Plastic pac

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TSM120NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 39A, 11.7mΩ FEATURES ● Low RDS(ON) to minimize conductive loss ● Low gate charge for f

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 12 A, 650 V, D1, Power88 FFSM1265A Description Silicon Carbide (SiC) Schottky Diodes use a completely

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Elektronische Bauelemente SM1200RT 200V, 1A Surface Mount Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies and halogen-

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Elektronische Bauelemente SM120JD ~ SM1200JD Voltage 20 ~ 200 V 1.0 Amp Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifie

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. MSCSM120AM50CT1AG Datasheet Phase Leg SiC MOSFET Power Module January 2020 Contents Contents Revision History

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