|
GW
| SM120 |
1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
SeCoS Halbleitertechnologie GmbH
| SM1200AF |
1.0 Amp Surface Mount Schottky Barrier Rectifiers |
STMicroelectronics
| STPS30SM120S |
Power Schottky rectifier |
|
SeCoS Halbleitertechnologie GmbH
| SM1200A |
Schottky Barrier Rectifiers |
|
HOLZWORTH
| HSM12001B |
12.5GHz/20GHz RF Synthesizer Modules |
Leshan Radio Company
| SM1200AF |
Schottky Barrier Rectifiers |
|
SeCoS Halbleitertechnologie GmbH
| SM1200B |
Schottky Barrier Rectifiers |
Microchip Technology
| MSCSM120X10CTYZBNMG |
SiC MOSFET |
|
Microchip Technology
| MSCSM120HM16T3AG |
Full Bridge SiC MOSFET Power Module |
|
Microchip Technology
| MSCSM120HRM311AG |
T-Type SiC MOSFET Power Module |
|
VSEEI
| VSM120N04-T2 |
These N-Channel enhancement mode power field effect transistors |
MIC
| SM120A |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
|
Microchip Technology
| MSCSM120AM03T6LIAG |
SiC MOSFET |
|
Microchip Technology
| MSCSM120AM042T6AG |
SiC MOSFET |
|
GW
| SM120A |
1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
Taiwan Semiconductor
| TSM120N06LCP |
N-Channel Power MOSFET |
Microsemi (now Microchip Technology)
| MSCSM120TAM31CT3AG |
3 Phase Bridge SiC MOSFET |
|
Microchip Technology
| MSCSM120HRM08NG |
T-Type SiC MOSFET Power Module |
|
VSEEI
| VSM120N04-T1 |
These N-Channel enhancement mode power field effect transistors |
|
DACO SEMICONDUCTOR
| SM1200 |
SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
