SS29 Datasheet | Specifications & PDF Download

TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Low forward voltage Low reverse surrent Small package

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BSS 295 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V Pin 1 G Type BSS 295 Type BSS 295 BSS

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BSS 296 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V Pin 1 G Type BSS 296 Type BSS 296 Pin

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BSS 297 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V Pin 1 G Type BSS 297 Type BSS 297 BSS

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BSS 296 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V Pin 1 G Type BSS 296 Type BSS 296 Pin

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® WON-TOP ELECTRONICS SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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Schottky Barrier Rectifiers Production specification SS28F--SS210F Features  Metal silicon junction, majority carrier conduction  High surge capab

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BSS 297 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V Pin 1 G Type BSS 297 Type BSS 297 BSS

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BSS 295 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V Pin 1 G Type BSS 295 Type BSS 295 BSS

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Schottky Barrier Rectifiers Production specification SS28BF--SS210BF Features  Metal silicon junction, majority carrier conduction  High surge cap

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www.DataSheet.co.kr Ordering number : EN8937 FSS294 SANYO Semiconductors DATA SHEET FSS294 Features • • • • • N-Channel Silicon MOSFET General-

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www.DataSheet4U.com Preliminary SS22L THRU SS210L 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 2.0 Ampe

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Schottky Rectifier SS23, SS24, SS25, SS26, SS28, SS29, S210 The SS23−S210 series includes high−efficiency, low power loss, general−propose Schottky re

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Production specification SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SS22FA--SS210FA FEATURES z Schottky barrier rectifier z Guarding protection Pb

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching  AEC-Q101 Qualified (Note1)  Low forward voltage :

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Suntan® Su® SS22 THRU SS210 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Ampere FEATU RE S ◆Low profile surfac

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Schottky Barrier Rectifiers Production specification SS28--SS210 Features  Metal silicon junction, majority carrier conduction  High surge capabil

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SS22 – SS215 Taiwan Semiconductor 2A, 20V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● Low power loss, high efficiency ● Ideal for aut

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Suntan® Su® SS22A THRU SS210A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Ampere FEATU RE S ◆Low profile surf

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