SS38 Datasheet | Specifications & PDF Download

ESS Technology, Inc. DESCRIPTION The 6ISBA ®  ES3890 single-chip Video CD (VCD) processor is the latest innovation of ESS’s family of VCD chips for V

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS387 High Speed Switching Diode FEATURES z Small surface moun

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SS32 THRU SS3A SCHOTTKY BARRIER RECTIFIERS Reverse Voltage – 20 to 100 Volts Forward Current – 3.0 Amperes Features • Plastic package has Underwriters

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SCHOTTKY BARRIER RECTIFIER RoHS ü SS32A Thru SS315A SMA 3.0 Amps FEATURES • Metal to silicon rectifier, majority carrier conduction • Low power los

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Schottky Barrier Rectifiers Production specification SS38BF--SS310BF Features  Metal silicon junction, majority carrier conduction  High surge cap

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SS32 thru SS310 www.DataSheet4U.com SURFACE MOUNT REVERSE VOLTAGE - 20 to 100 Volts FORWARD CURRENT - 3.0 Amperes SMC SCHOTTKY BARRIER RECTIFIERS F

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BL FEATURES www.DataSheet4U.com GALAXY ELECTRICAL SS32 - - - SS310 REVERSE VOLTAGE: 20 - 100 V FORWARD CURRENT: 3.0 A SURFACE MOUNT SCHOTTKY BARRI

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® WON-TOP ELECTRONICS 1SS388 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Turn-On Voltage  Fast Switching Speed  PN Junction Guard Ring

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RoHS 1SS387 1SS387 High Speed SWITCHING Diodes FEATURES Small package Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Paramete

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV 1SS385FV High-Speed Switching Applications z Low forward voltage: VF = 0.23 V (typ.)

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3 .0 AMPS. Surfa ce Mount Schottky Barrier Rectif iers S S32A - SS320A SMA/DO-214AC Features For surface mounted application Easy pick and place Met

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3.0A Surface Mount Schottky Rectifier SS32A - SS310A 3.0A Surface Mount Schottky Rectifier Features • Low profile surface mount package • Built-in str

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1SS380 Switching Diode (Low leakage) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VRM 40 V IFM 225 mA Io 100 mA IFSM 400 mA ●Features H

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application  Small package  Composed of 2 independent diodes.  Lo

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 1SS383 Low Voltage High Speed Switching  Small package  Composed of 2 independent dio

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application 1SS389 Unit: mm z Small package z Low forward voltage:

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® WON-TOP ELECTRONICS 1SS387 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Silicon Epitaxial Planar Die Construction  Fast Switching Speed  Sur

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1SS389 Schottky Barrier Diode SOD-523 Features — Low forward voltage. — Small package. Applications — Schottky diode in surface mounted circuits. O

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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