SS38 Datasheet | Specifications & PDF Download

ESS Technology, Inc. DESCRIPTION The 6ISBA ®  ES3890 single-chip Video CD (VCD) processor is the latest innovation of ESS’s family of VCD chips for V

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS381 1SS381 VHF Tuner Band Switch Applications • Small package • Small total capacitance: CT = 1.2 pF

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1SS380 Silicon Epitaxial Planar Diodes SOD-323 Features — Small surface mounting type. — High speed. — Suitable for high packing density. Applicatio

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1SS380VM Switching Diode (Low leakage) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VRM 80 V IFM 225 mA Io 100 mA IFSM 400

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1SS380 Switching Diode (Low leakage) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VRM 40 V IFM 225 mA Io 100 mA IFSM 400 mA ●Features H

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1SS389 Schottky Barrier Diode SOD-523 Features — Low forward voltage. — Small package. Applications — Schottky diode in surface mounted circuits. O

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1SS388 High Speed Switching Diode SOD-523 Features — Low forward voltage. — Low reverse current. — Small package. Applications — High-speed switching

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ESS Technology, Inc. DESCRIPTION The 6ISBA ®  ES3890 single-chip Video CD (VCD) processor is the latest innovation of ESS’s family of VCD chips for V

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application  Small package  Composed of 2 independent diodes.  Lo

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward voltage: VF = 0.23V (typ.) @IF = 5

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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1SS387 High Speed Switching Diodes SOD-523 Features — Low forward voltage. — Fast reverse recovery time. — Small total capacitance. Applications — Hi

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1SS389 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Application Features • Low forward voltage: VF = 0.23V (typ.) @IF=5mA PINNING

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Small Signal Schottky Diodes 1SS389-G Reverse Voltage: 10 V Forward Current: 100 mA RoHS Device Features - High speed switching. - Small surface mount

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1SS388 FEATURES : * Small package * Low forward voltage * Low revese current * Pb / RoHS Free MECHANICAL DATA : * Lesd Finish : 100% Matte Sn (Tin) *

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Switching Diode 1SS380TF Applications High speed switching Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 AEC-Q101 Qualified Land size figur

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching 1SS385 Unit: mm z Low forward voltage: VF (2) = 0.23V (typ.) @IF =

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