SS38 Datasheet | Specifications & PDF Download

® WON-TOP ELECTRONICS SS32 – SS310 3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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Schottky Barrier Rectifiers Production specification SS38BF--SS310BF Features  Metal silicon junction, majority carrier conduction  High surge cap

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward voltage: VF = 0.23V (typ.) @IF = 5

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Features Schottky barrier rectifier Guardring protection Low forward voltage Reverse energy tested High current capability Extremely low thermal resis

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application  Small package  Composed of 2 independent diodes.  Lo

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm  Small package  Low forward voltage:

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application 1SS389 Unit: mm z Small package z Low forward voltage:

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® WON-TOP ELECTRONICS 1SS380 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Silicon Epitaxial Planar Die Construction  Fast Switching Speed  Sur

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SS32 THRU SS310 SPECIFICATIONS 3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS PRODUCT FEATURES 1. FLAMMABILITY CLASSIFICATION: 94V-0 2. EXTREMELY LOW VF

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Suntan® Su® SS32 THRU SS310 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 3.0 Ampere FEATU RE S ◆Low profile surfac

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SCHOTTKY BARRIER RECTIFIER RoHS ü SS32A Thru SS315A SMA 3.0 Amps FEATURES • Metal to silicon rectifier, majority carrier conduction • Low power los

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1SS388 FEATURES : * Small package * Low forward voltage * Low revese current * Pb / RoHS Free MECHANICAL DATA : * Lesd Finish : 100% Matte Sn (Tin) *

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1SS380VM Switching Diode (Low leakage) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VRM 80 V IFM 225 mA Io 100 mA IFSM 400

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SS3xxF Surface Mount Schottky Barrier Rectifier VOLTAGE RANGE 20 to 200 Volts CURRENT 3.0 Amperes FEATURES * Metal silicon junction, majority carrie

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 1SS383 Low Voltage High Speed Switching  Small package  Composed of 2 independent dio

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Silicon Epitaxial Planar Diode FEATURES  Small surface mounting type  High speed  Suitable for high packing density Pb Lead-free Production spec

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® WON-TOP ELECTRONICS 1SS387 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Silicon Epitaxial Planar Die Construction  Fast Switching Speed  Sur

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1SS389 Schottky Barrier Diode SOD-523 Features — Low forward voltage. — Small package. Applications — Schottky diode in surface mounted circuits. O

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Schottky Barrier Rectifiers Production specification SS38F--SS310F Features  Metal silicon junction, majority carrier conduction  High surge capab

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® WON-TOP ELECTRONICS 1SS388 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Turn-On Voltage  Fast Switching Speed  PN Junction Guard Ring

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